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Электронный компонент: 6R1MBI75P-160

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6R1MBi75P-160
Diode Module
Diode Module with Brake
Diode:1600V / 75A, IGBT:1400A/50A
Features
Compact Package
P.C. Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Symbol Condition Rating Unit
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
One cycle surge current
I
2
t
Operation junction temperature
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Operation junction temperature
Brake
Converte
Storage junction temperature
Isolation voltage
Mounting screw torque
V
RRM
V
RSM
I
O
I
FSM
I
2
t
T
j
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
T
j
T
stg
V
iso
50Hz/60Hz sine wave
Tc=115C
From rated load
From rated load
DC Tc=25C
Tc=75C
1ms Tc=25C
Tc=75C
1 device
AC : 1 minute
M5 screw
1600
1760
75
600
1440
-40 to +125
1400
20
50
35
100
70
240
1400
+150
-40 to +125
3000
2.0 to 2.5
V
V
A
A
A
2
s
C
V
V
A
A
W
V
C
C
V
Nm
Fofward voltage
Reverse current
Zero gate voltage Collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Electrical characteristics (Tj=25C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Thermal characteristics
Item Symbol Condition Min. Typ. Max. Unit
Thermal resistance
Thermal Resistance(Case to fine)
V
FM
I
RRM
I
CES
I
GES
V
CE(sat)
ton
tr
toff
tf
I
RRM
R
th(j-c)
R
th(c-f)
Tj=25C, I
FM
=75A
Tj=150C, V
R
=V
RRM
V
GE
=0V. V
CE
=1400V
V
CE
=0V. V
GE
=20V
V
GE
=15V. I
C
=35A
Vcc=800V
Ic=35A
V
GE
=15V
R
G
=33ohm
Converter Per total loss
Per each device
Brake IGBT (1 device)
with thermal compound
1.35
15
1.0
200
2.4
2.8
0.35
1.2
0.25
0.6
0.45
1.0
0.08
0.3
1.0
0.16
0.96
0.70
0.08
V
mA
mA
nA
V
s
mA
C/W
C/W
Brake Co.
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10
20
30
40
50
60
70
80
F
o
r
w
ar
d C
u
r
r
ent
I
F
(
A
)
max
typ
150deg
25deg
Forward Characteristics
Forward Voltage
O utp ut C urre nt - T o ta l L o s s
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
0
2 0
4 0
6 0
8 0
O u t p u t C u rre n t Io (A )
Total Loss (W)
S u r g e C u r r e n t
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
0 . 0 1
0 . 1
1
Peak Surge Current IFSM(A)
T im e
O u tp u t C u rre n t - C a s e T e m p e ra tu re
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0
4 0
6 0
8 0
O u t p u t C u rre n t Io (A )
Case Temperature Tc(deg.C
)
Transient Thermal Impedance
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Zth(j-c)(deg.C/W)
Time
(
)
[ B rake ] Tra nsie nt Therm al Im p edance
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Tim e (s ec )
Zth(j-c)(t) (deg.C/W)
IG BT
F W D
6R1MBi75P-160
Diode Module
6R1MBi75P-160
Diode Module
0
1
2
3
4
5
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
C
o
l
l
e
ct
o
r
c
u
r
r
e
n
t
:
I
c

[
A
]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
ct
o
r
c
u
r
r
e
n
t
:
I
c

[
A
]
0
1
2
3
4
5
0
20
40
60
80
Tj= 25C
Tj= 125C
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
ct
o
r
c
u
r
r
e
n
t
:
I
c

[
A
]
5
10
15
20
25
0
2
4
6
8
10
Ic= 17.5A
Ic= 35A
Ic= 70A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Co
lle
c
t
o
r
-
E
m
itt
e
r
v
o
lta
g
e
:

V
C
E
[
V
]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Ca
p
a
cit
a
n
c
e
:
C
i
e
s
, Co
es,

C
r
e
s

[ p
F
]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
100
200
300
400
0
200
400
600
800
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=35A, Tj= 25C
Gate charge : Qg [ nC ]
Co
lle
c
t
o
r
-
E
m
itt
e
r
v
o
lta
g
e
:

V
C
E
[
V
]
0
5
10
15
20
25
G
a
te
-
E
m
it
ter
v
o
lta
g
e
: V
G
E

[ V
]
Diode Module
Outline Drawings, mm
Equivalent Circuit Schematic
6R1MBi75P-160
K
C
E
G
K
C
E
G
3
28.5
32
11
11
11.75
14
14
13
17
2.5
6
1.5
K
C
G
E
6R1MBi100P-160
JAPAN
2.1
3.4
2 x t1
R1
20.4
90
78.5
7
11.75
14
7
0.5
21
7
23.5
16
4- 6.1
2- 5.5
-
+
C3
6R1MBi75P-160