MRF9582NT1
1
RF Device Data
Freescale Semiconductor
Silicon Lateral FET, N-Channel
Enhancement-Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as
portable analog and digital cellular radios and PC RF modems.
Typical CW RF Performance @ 849 MHz: V
DD
= 12.5 Volts, I
DQ
= 300 mA,
P
out
= 38 dBm
Power Gain -- 10.5 dB
Drain Efficiency -- 55%
Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
17
Vdc
Drain-Gate Voltage (R
GS
= 1.0 M)
V
DGO
17
Vdc
Gate-Source Voltage
V
GS
4.0
Vdc
Drain Current - Continuous
I
D
1.5
Adc
Total Device Dissipation @ T
C
= 85C
P
D
10.5
W
Storage Temperature Range
T
stg
-65 to 150
C
Operating Junction Temperature
T
J
150
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
R
JC
6
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF9582NT1
Rev. 1, 7/2006
Freescale Semiconductor
Technical Data
MRF9582NT1
849 MHz, 38 dBm, 12.5 V
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
CASE 449-02, STYLE 1
PLD-1
4
1
2
3
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF9582NT1
Table 4. Electrical Characteristics
(T
C
= 25C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 100 nAdc)
V
(BR)DSS
--
45
--
Vdc
Drain-Source Leakage Current (V
DS
= 12.5 Vdc, V
GS
= 0)
I
DSS
--
--
100
nAdc
Gate-Source Leakage Current (V
GS
= 5 Vdc, V
DS
= 0)
I
GSS
--
--
100
nAdc
On Characteristics
Gate Threshold Voltage
V
GS
--
2.4
--
Vdc
Resistance Drain-Source (V
GS
= 5 Vdc, I
D
= 300 mA)
R
DS(on)
0.05
0.5
0.8
Dynamic Characteristics
Input Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
--
30.77
--
pF
Output Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
--
15.6
--
pF
Feedback Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
--
0.82
--
pF
Typical Characteristics
Power Gain (V
DD
= 12.5 Vdc, P
in
= 27.5 dBm, f = 849 MHz)
G
ps
--
10.5
--
dB
Drain Efficiency (V
DD
= 12.5 Vdc, P
in
= 27.5 dBm, f = 849 MHz)
D
--
55
--
%
Output Power
P
out
--
38
--
dBm
8
RF Device Data
Freescale Semiconductor
MRF9582NT1
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Document Number: MRF9582NT1
Rev. 1, 7/2006
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