FMS 1N60/1N60P
Formosa MicroSemi CO., LTD.
www.formosams.com
Rev. 2, 22-Nov-2002
1/2
Schottky Barrier Diode
Features
1. High
reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25
Parameter
Test Conditions
Type
Symbol
Value
Unit
1N60 V
RRM
40 V
Repetitive peak reverse voltage
1N60P V
RRM
45 V
1N60 I
FSM
150 mA
Peak forward surge current
t
p
1 s
1N60P I
FSM
500 mA
1N60 I
F
30 mA
Forward continuous current
T
a
=25
1N60P I
F
50 mA
Storage temperature range
T
stg
-65~+125
Maximum Thermal Resistance
T
j
=25
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mm50mm1.6mm
R
thJA
250 K/W
FMS 1N60/1N60P
Formosa MicroSemi CO., LTD.
www.formosams.com
Rev. 2, 22-Nov-2002
2/2
Electrical Characteristics
T
j
=25
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
1N60 V
F
0.32
0.5
V
I
F
=1mA
1N60P V
F
0.24
0.5
V
I
F
=30mA 1N60
V
F
0.65
1.0
V
Forward voltage
I
F
=200mA 1N60P
V
F
0.65
1.0
V
1N60 I
R
0.1
0.5
A
Reverse current
V
R
=15V
1N60P I
R
0.5
1.0
A
V
R
=1V, f=1MHz
1N60
C
J
2.0 pF
Junction capacitance
V
R
=10V, f=1MHz
1N60P
C
J
6.0
pF
Reverse recovery time
I
F
=I
R
=1mA I
rr
=1mA R
C
=100
t
rr
1.0
ns
Dimensions in mm
Standard Glass Case
JEDEC DO 35
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