2002 Fairchild Semiconductor Corporation
SGH15N60RUF Rev. A1
IGBT
S
G
H15N60RUF
SGH15N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ T
C
= 100
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 15A
High input impedance
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGH15N60RUF
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
24
A
Collector Current
@ T
C
= 100
C
15
A
I
CM (1)
Pulsed Collector Current
45
A
T
SC
Short Circuit Withstand Time
@ T
C
= 100
C
10
us
P
D
Maximum Power Dissipation
@ T
C
= 25
C
160
W
Maximum Power Dissipation
@ T
C
= 100
C
64
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case
--
0.77
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
G C E
TO-3P
SGH15N60RUF Rev. A1
S
G
H15N60RUF
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
uA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 15mA, V
CE
= V
GE
5.0
6.0
8.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 15A
,
V
GE
= 15V
--
2.2
2.8
V
I
C
= 24A
,
V
GE
= 15V
--
2.5
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
948
--
pF
C
oes
Output Capacitance
--
101
--
pF
C
res
Reverse Transfer Capacitance
--
33
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 15A,
R
G
= 13
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
17
--
ns
t
r
Rise Time
--
33
--
ns
t
d(off)
Turn-Off Delay Time
--
44
65
ns
t
f
Fall Time
--
118
200
ns
E
on
Turn-On Switching Loss
--
320
--
uJ
E
off
Turn-Off Switching Loss
--
356
--
uJ
E
ts
Total
Switching
Loss
--
676
950
uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 15A,
R
G
= 13
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
20
--
ns
t
r
Rise Time
--
34
--
ns
t
d(off)
Turn-Off Delay Time
--
48
70
ns
t
f
Fall Time
--
212
350
ns
E
on
Turn-On Switching Loss
--
340
--
uJ
E
off
Turn-Off Switching Loss
--
695
--
uJ
E
ts
Total
Switching
Loss
--
1035
1450
uJ
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
C
10
--
--
us
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 15A,
V
GE
= 15V
--
42
60
nC
Q
ge
Gate-Emitter Charge
--
7
10
nC
Q
gc
Gate-Collector Charge
--
17
24
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
SGH15N60RUF Rev. A1
S
G
H15N60RUF
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
5
10
15
20
25
30
35
40
45
50
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
o
ll
ect
o
r C
u
r
r
en
t,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
1
10
0
5
10
15
20
25
30
35
40
45
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
------
C
o
l
l
ec
to
r C
u
rre
n
t
, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
30A
15A
I
C
= 8A
Common Emitter
V
GE
= 15V
Col
l
e
c
t
or
- Em
i
tter
Vo
l
t
age,
V
CE
[V
]
Case Temperature, T
C
[
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
30A
15A
I
C
= 7A
Col
l
e
c
t
o
r
-
Em
i
t
t
e
r
Vo
l
t
ag
e
,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
30A
15A
I
C
= 7A
Co
l
l
e
c
tor -
E
m
i
tter Vo
l
t
age, V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
24
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 25W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
Lo
ad
C
u
r
r
e
n
t
[A
]
SGH15N60RUF Rev. A1
S
G
H15N60RUF
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
300
600
900
1200
1500
1800
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
a
p
a
cit
ance
[
p
F
]
Collector - Emitter Voltage, V
CE
[V]
1
10
100
10
100
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 15A
T
C
= 25
T
C
= 125
------
Ton
Tr
S
w
i
t
ching
T
i
m
e
[ns]
Gate Resistance, R
G
[
]
1
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 15A
T
C
= 25
T
C
= 125
------
S
w
it
c
h
in
g
T
i
m
e
[n
s
]
Gate Resistance, R
G
[
]
1
10
100
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 15A
T
C
= 25
T
C
= 125
------
S
w
it
c
h
in
g
L
o
s
s
[
u
J
]
Gate Resistance, R
G
[
]
5
10
15
20
25
30
10
100
Ton
Tr
Common Emitter
V
GE
=
15V, R
G
= 13
T
C
= 25
T
C
= 125
------
S
w
it
c
h
in
g
T
i
m
e
[
n
s
]
Collector Current, I
C
[A]
5
10
15
20
25
30
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
15V, R
G
= 13
T
C
= 25
T
C
= 125
------
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Collector Current, I
C
[A]
SGH15N60RUF Rev. A1
S
G
H15N60RUF
2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
0.1
1
10
100
1000
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
DC Operation
1
100us
50us
Col
l
e
ct
or
Cu
r
r
en
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
C
o
l
l
e
c
to
r
C
u
rr
e
n
t,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
5
10
15
20
25
30
100
1000
Eoff
Eon
Eoff
Common Emitter
V
GE
=
15V, R
G
= 13
T
C
= 25
T
C
= 125
------
Sw
i
t
ch
i
n
g Los
s [u
J
]
Collector Current, I
C
[A]
0
10
20
30
40
50
0
3
6
9
12
15
200 V
V
CC
= 100 V
300 V
Common Emitter
R
L
= 20
T
C
= 25
G
a
te
-
E
m
itte
r
V
o
lta
g
e
,
V
GE
[
V
]
Gate Charge, Q
g
[ nC ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
l Res
p
on
se, Zth
jc [
/W
]
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
PDF 
ZIP