4/10/03
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
Page 1 of 8
2003 Fairchild Semiconductor Corporation
MOCD223-M
DESCRIPTION
The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two
monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic
package. It is ideally suited for high density applications that require low input current and eliminates
the need for through-the-board mounting.
FEATURES
U.L. Recognized (File #E90700, Volume 2)
VDE Recognized (File #13616) (add option "V" for VDE approval, i.e, MOCD223V-M)
Convenient Plastic SOIC-8 Surface Mountable Package Style
High Current Transfer Ratio of 500% Minimum at I
F
= 1 mA
Minimum BV
CEO
of 30 Volts Guaranteed
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
High Input-Output Isolation Voltage of 2500 V
AC(rms)
Guaranteed
APPLICATIONS
Interfacing and coupling systems of different potentials and impedances
General purpose switching circuits
Monitor and detection circuits
EMITTER 1
COLLECTOR 1
LED 1 ANODE
LED 1 CATHODE
1
2
3
4
5
6
7
8
EMITTER 2
COLLECTOR 2
LED 2 ANODE
LED 2 CATHODE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C Unless otherwise specified)
Rating
Symbol
Value
Unit
EMITTER
Forward Current - Continuous
I
F
60
mA
Forward Current - Peak (PW = 100 s, 120 pps)
I
F
(pk)
1.0
A
Reverse Voltage
V
R
6.0
V
LED Power Dissipation @ T
A
= 25C
P
D
90
mW
Derate above 25C
0.8
mW/C
DETECTOR
Collector-Emitter Voltage
V
CEO
30
V
Collector-Base Voltage
V
CBO
70
V
Emitter-Collector Voltage
V
ECO
7.0
V
Collector Current-Continuous
I
C
150
mA
Detector Power Dissipation @ T
A
= 25C
P
D
150
mW
Derate above 25C
1.76
mW/C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, t = 1 min. Duration)
V
ISO
2500
Vac(rms)
Total Device Power Dissipation @ T
A
= 25C
P
D
250
mW
Derate above 25C
2.94
mW/C
Ambient Operating Temperature Range
T
A
-40 to +100
C
Storage Temperature Range
T
stg
-40 to +150
C
Lead Soldering Temperature
(1/16" from case, 10 sec. duration)
T
L
260
C
4/10/03
Page 2 of 8
2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD223-M
** Typical values at T
A
= 25C
NOTE:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ**
Max
Unit
EMITTER
Input Forward Voltage
(I
F
= 1.0 mA)
V
F
--
1.25
1.3
V
Reverse Leakage Current
(V
R
= 6.0 V)
I
R
--
0.001
100
A
Capacitance
C
IN
--
18
--
pF
DETECTOR
Collector-Emitter Dark Current
(V
CE
= 5.0 V, T
A
= 25C)
I
CEO1
--
1.0
50
nA
(V
CE
= 5.0 V, T
A
= 100C)
I
CEO2
--
1.0
--
A
Collector-Emitter Breakdown Voltage
(I
C
= 100 A)
BV
CEO
30
90
--
V
Emitter-Collector Breakdown Voltage
(I
E
= 100 A)
BV
ECO
7.0
10
--
V
Collector-Emitter Capacitance
(f =z 1.0 MHz, V
CE
= 0)
C
CE
--
5.5
--
pF
COUPLED
Collector-Output Current
(4)
(I
F
= 1.0 mA, V
CE
= 5 V)
CTR
500
1000
--
%
Collector-Emitter Saturation Voltage
(I
C
= 500 A, I
F
= 1.0 mA)
V
CE (sat)
--
--
1.0
V
Turn-On Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
)(fig 6.)
t
on
--
3.5
--
s
Turn-Off Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
)(fig 6.)
t
off
--
95
--
s
Rise Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
)(fig 6.)
t
r
--
1.0
--
s
Fall Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
)(fig 6.)
t
f
--
2.0
--
s
Isolation Surge Voltage
(1,2,3)
f = 60 Hz, t = 1 min.
V
ISO
2500
--
--
Vac(rms)
Isolation Resistance
(2)
V
I-O
= 500 V
R
ISO
10
11
--
--
Isolation Capacitance
(2)
V
I-O
= 0 V, f = 1 MHz
C
ISO
--
0.2
--
pF
4/10/03
Page 3 of 8
2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD223-M
Fig. 2 Output Curent vs. Input Current
I
F
- LED INPUT CURRENT (mA)
I
C
- OU
T
P
U
T
C
O
L
L
EC
T
O
R
CU
R
R
E
N
T
(
N
O
R
MA
L
I
Z
E
D
)
Fig. 3 Output Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
I
C
- OU
T
P
U
T
C
O
L
L
EC
T
O
R
CU
R
R
E
N
T (
N
O
R
M
A
L
I
ZE
D
)
Fig. 4 Output Current vs. Collector - Emitter Voltage
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
I
C
- O
U
T
P
U
T
CO
L
L
EC
T
O
R
CU
R
R
E
N
T
(
N
OR
M
A
L
I
Z
E
D
)
Fig. 5 Dark Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
I
CE
O
- C
O
L
L
E
C
T
O
R -
E
M
I
T
T
E
R
D
A
RK
CU
RR
E
N
T
(
n
A
)
I
F
- LED FORWARD CURRENT (mA)
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1
10
100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 55
C
T
A
= 25
C
T
A
= 100
C
0.1
1
10
100
0.1
1
10
V
CE
= 5V
NORMALIZED TO I
F
= 1mA
-80
-60
-40
-20
0
20
40
60
80
100
120
0.01
0.1
1
10
I
F
= 1mA, V
CE
= 5V
NORMALIZED TO T
A
= 25
o
C
0
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
F
= 1mA
NORMALIZED TO V
CE
= 5V
I
0
20
40
60
80
100
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
CE
= 10V
NORMALIZED TO T
A
= 25
o
C
4/10/03
Page 4 of 8
2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD223-M
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT
WAVE FORMS
t
r
t
f
INPUT
I
F
R
L
R
BE
V
CC
= 10V
OUTPUT
t
on
10%
90%
t
off
Figure 6. Switching Time Test Circuit and Waveforms
I
C
4/10/03
Page 5 of 8
2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD223-M
Package Dimensions (Surface Mount)
8-Pin Small Outline
Lead Coplanarity : 0.004 (0.10) MAX
0.202 (5.13)
0.182 (4.63)
0.021 (0.53)
0.011 (0.28)
0.050 (1.27)
TYP
0.164 (4.16)
PIN1
0.144 (3.66)
0.244 (6.19)
0.224 (5.69)
0.143 (3.63)
0.123 (3.13)
0.008 (0.20)
0.003 (0.08)
0.010 (0.25)
0.006 (0.16)
SEATING PLANE
0.024 (0.61)
0.050 (1.27)
0.155 (3.94)
0.275 (6.99)
0.060 (1.52)
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