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2003 Fairchild Semiconductor Corporation
April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
I
S
L9V30
40D3S / IS
L
9
V3040S
3S / IS
L
9
V3040P
3
/
ISL9V
3040S3
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARK
TM
300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
EcoSPARKTM devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49362
Applications
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications
Features
Space saving D-Pak package availability
SCIS Energy = 300mJ at T
J
= 25
o
C
Logic Level Gate Drive
Device Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
BV
CER
Collector to Emitter Breakdown Voltage (I
C
= 1 mA)
430
V
BV
ECS
Emitter to Collector Voltage - Reverse Battery Condition (I
C
= 10 mA)
24
V
E
SCIS25
At Starting T
J
= 25C, I
SCIS
= 14.2A, L = 3.0 mHy
300
mJ
E
SCIS150
At Starting T
J
= 150C, I
SCIS
= 10.6A, L = 3.0 mHy
170
mJ
I
C25
Collector Current Continuous, At T
C
= 25C, See Fig 9
21
A
I
C110
Collector Current Continuous, At T
C
= 110C, See Fig 9
17
A
V
GEM
Gate to Emitter Voltage Continuous
10
V
P
D
Power Dissipation Total T
C
= 25C
150
W
Power Dissipation Derating T
C
> 25C
1.0
W/C
T
J
Operating Junction Temperature Range
-40 to 175
C
T
STG
Storage Junction Temperature Range
-40 to 175
C
T
L
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
C
T
pkg
Max Lead Temp for Soldering (Package Body for 10s)
260
C
ESD
Electrostatic Discharge Voltage at 100pF, 1500
4
kV
Package
GATE
COLLECTOR
EMITTER
R
2
R
1
Symbol
JEDEC TO-252AA
D-Pak
D-Pak
JEDEC TO-263AB
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
G
E
G
JEDEC TO-262AA
E
G
C
E
G
C
2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
I
S
L9V30
40D3S / IS
L
9
V3040S
3S / IS
L
9
V3040P
3
/
ISL9V
3040S3
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
V3040D
ISL9V3040D3S
TO-252AA
16mm 2500
V3040S
ISL9V3040S3S
TO-263AB
24mm 800
V3040P
ISL9V3040P3
TO-220AA
- -
V3040S
ISL9V3040S3
TO-262AA
- -
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
CER
Collector to Emitter Breakdown Voltage
I
C
= 2mA, V
GE
= 0,
R
G
= 1K
,
See Fig. 15
T
J
= -40 to 150C
370
400
430
V
BV
CES
Collector to Emitter Breakdown Voltage
I
C
= 10mA, V
GE
= 0,
R
G
= 0
,
See Fig. 15
T
J
= -40 to 150C
390
420
450
V
BV
ECS
Emitter to Collector Breakdown Voltage
I
C
= -75mA, V
GE
= 0V,
T
C
= 25C
30
-
-
V
BV
GES
Gate to Emitter Breakdown Voltage
I
GES
= 2mA
12
14
-
V
I
CER
Collector to Emitter Leakage Current
V
CER
= 250V,
R
G
= 1K
,
See
Fig. 11
T
C
= 25C
-
-
25
A
T
C
= 150C
-
-
1
mA
I
ECS
Emitter to Collector Leakage Current
V
EC
= 24V, See
Fig. 11
T
C
= 25C
-
-
1
mA
T
C
= 150C
-
-
40
mA
R
1
Series Gate Resistance
-
70
-
R
2
Gate to Emitter Resistance
10K
-
26K
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 6A,
V
GE
= 4V
T
C
= 25C,
See Fig. 3
-
1.25
1.60
V
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 10A,
V
GE
= 4.5V
T
C
= 150C,
See Fig. 4
-
1.58
1.80
V
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 15A,
V
GE
= 4.5V
T
C
= 150C
-
1.90
2.20
V
Q
G(ON)
Gate Charge
I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
-
17
-
nC
V
GE(TH)
Gate to Emitter Threshold Voltage
I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
T
C
= 25C
1.3
-
2.2
V
T
C
= 150C
0.75
-
1.8
V
V
GEP
Gate to Emitter Plateau Voltage
I
C
= 10A,
V
CE
= 12V
-
3.0
-
V
t
d(ON)R
Current Turn-On Delay Time-Resistive
V
CE
= 14V, R
L
= 1
,
V
GE
= 5V, R
G
= 1K
T
J
= 25C, See Fig. 12
-
0.7
4
s
t
rR
Current Rise Time-Resistive
-
2.1
7
s
t
d(OFF)L
Current Turn-Off Delay Time-Inductive
V
CE
= 300V, L = 500Hy
,
V
GE
= 5V, R
G
= 1K
T
J
= 25C, See Fig. 12
-
4.8
15
s
t
fL
Current Fall Time-Inductive
-
2.8
15
s
SCIS
Self Clamped Inductive Switching
T
J
= 25C, L = 3.0 mHy,
R
G
= 1K
,
V
GE
= 5V, See
Fig. 1 & 2
-
-
300
mJ
R
JC
Thermal Resistance Junction-Case
TO-252,TO-263,TO-220,TO-
262
-
-
1.0
C/W
2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
I
S
L9V30
40D3S / IS
L
9
V3040S
3S / IS
L
9
V3040P
3
/
ISL9V
3040S3
Typical Performance Curves
(Continued)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
t
CLP
, TIME IN CLAMP (S)
I
SC
I
S
, I
N
D
UCT
IVE
SWIT
CHING CURRENT
(
A
)
25
15
5
30
20
10
0
R
G
= 1k
, V
GE
= 5V,V
dd
= 14V
200
175
150
0
125
50
25
75
100
T
J
= 25C
T
J
= 150C
SCIS Curves valid for V
clamp
Voltages of <430V
25
15
5
30
20
10
0
I
SCI
S
,
INDUCT
IVE
S
W
IT
CHING CURR
ENT
(
A
)
0
10
2
4
6
8
T
J
= 25C
T
J
= 150C
L, INDUCTANCE (mHy)
R
G
= 1k
, V
GE
= 5V,V
dd
= 14V
SCIS Curves valid for V
clamp
Voltages of <430V
1.30
1.26
1.22
1.18
1.14
-75
25
-25
175
125
75
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (C)
V
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R VOL
T
AGE
(
V
)
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
CE
= 6A
-75
25
-25
175
125
75
-50
0
50
100
150
1.8
1.7
1.6
1.5
1.4
T
J
, JUNCTION TEMPERATURE (C)
V
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R V
O
L
T
A
G
E
(
V
)
I
CE
= 10A
1.3
1.2
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R CU
RRENT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
0
10
0
2.0
1.0
3.0
4.0
25
15
5
T
J
= - 40C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
T
J
= 25C
I
CE
, COL
L
E
C
T
O
R T
O
E
M
IT
T
E
R CURRENT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
10
0
25
15
5
0
2.0
1.0
3.0
4.0
2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
I
S
L9V30
40D3S / IS
L
9
V3040S
3S / IS
L
9
V3040P
3
/
ISL9V
3040S3
Typical Performance Curves
(Continued)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
I
CE
, COL
L
ECT
O
R
T
O
EM
IT
T
E
R CURRE
NT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
25
15
5
0
20
10
0
2.0
1.0
3.0
4.0
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
T
J
= 175C
I
CE
, COL
L
ECT
O
R
T
O
EM
IT
T
E
R CURRE
NT
(
A
)
V
GE
, GATE TO EMITTER VOLTAGE (V)
2.0
1.0
3.0
4.0
25
15
5
0
20
10
PULSE DURATION = 250s
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 25C
T
J
= 150C
2.5
1.5
3.5
4.5
T
J
= -40C
I
CE
,
D
C
CO
L
L
E
CT
OR CUR
RENT
(
A
)
T
C
, CASE TEMPERATURE (C)
25
25
175
125
75
50
100
150
20
15
10
5
0
V
GE
= 4.0V
2.2
175
50
100
2.0
1.8
1.6
1.4
1.0
V
CE
= V
GE
V
TH
, T
HRE
SHOL
D VOL
T
AGE (
V
)
T
J
JUNCTION TEMPERATURE (C)
150
0
-50
125
75
25
-25
1.2
I
CE
= 1mA
L
E
AKAGE CURRE
NT
(
A)
T
J
, JUNCTION TEMPERATURE (C)
1000
10
0.1
10000
100
1
25
-25
175
125
75
-50
0
50
100
150
V
CES
= 250V
V
ECS
= 24V
V
CES
= 300V
25
175
125
75
50
100
150
T
J
, JUNCTION TEMPERATURE (C)
SWIT
CHING T
I
M
E
(
S
)
12
10
8
6
4
2
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Resistive t
OFF
Inductive t
OFF
Resistive t
ON
2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
I
S
L9V30
40D3S / IS
L
9
V3040S
3S / IS
L
9
V3040P
3
/
ISL9V
3040S3
Typical Performance Curves
(Continued)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
C, CAPAC
I
T
ANCE
(
p
F
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1600
800
400
1200
0
10
5
15
20
25
0
C
IES
C
OES
C
RES
FREQUENCY = 1 MHz
Q
G
, GATE CHARGE (nC)
V
GE
, GAT
E
T
O
E
M
IT
T
E
R V
O
L
T
AGE
(
V
)
0
2
4
8
0
4
8
12
16
20
24
28
3
5
7
6
1
32
I
G(REF)
= 1mA, R
L
= 1.25
,
T
J
= 25C
V
CE
= 6V
V
CE
= 12V
BV
CE
R
, BREA
KDOWN VOL
T
AGE (
V
)
R
G
, SERIES GATE RESISTANCE (k
)
430
410
400
420
10
2000
1000
3000
390
100
415
405
425
395
T
J
= - 40C
T
J
= 25C
T
J
= 175C
I
CER
= 10mA
Z
th
J
C
, NORM
AL
IZ
E
D
T
H
E
R
M
A
L
RES
P
ONSE
T
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
-2
10
-1
10
-2
10
-3
10
-4
10
-5
10
-1
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
t
1
t
2
P
D
10
-6
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-3
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