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2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
R
2
R
1
COLLECTOR
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= 175
o
C
Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
The development type number for this device is TA49021.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS
TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
December 2001
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
UNITS
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
390
V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
24
V
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . I
C25
18
A
at V
GE
= 5V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . I
C100
14
A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
10
V
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
17
A
at
L
=
2.3mH,
T
C
= + 175
o
C . . . . . . . . . . . . . . . . . . . . . . I
SCIS
12
A
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
332
mJ
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
100
W
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.67
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to +175
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
6
KV
NOTE: May be exceeded if I
GEM
is limited to 10mA.
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CER
I
C
= 10mA,
V
GE
= 0V
R
GE
= 1k
T
C
= +175
o
C
320
355
400
V
T
C
= +25
o
C
330
360
390
V
T
C
= -40
o
C
320
350
385
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 7A,
V
CE
= 12V
T
C
= +25
o
C
-
2.7
-
V
Gate Charge
Q
G(ON)
I
C
= 7A,
V
CE
= 12V
T
C
= +25
o
C
-
24
-
nC
Collector-Emitter Clamp Breakdown
Voltage
BV
CE(CL)
I
C
= 7A
R
G
= 1000
T
C
= +175
o
C
350
380
410
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA
T
C
= +25
o
C
24
28
-
V
Collector-Emitter Leakage Current
I
CER
V
CE
= 250V
R
GE
= 1k
T
C
= +25
o
C
-
-
25
A
T
C
= +175
o
C
-
-
250
A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 7A
V
GE
= 4.5V
T
C
= +25
o
C
-
1.25
1.45
V
T
C
= +175
o
C
-
1.15
1.6
V
I
C
= 14A
V
GE
= 5V
T
C
= +25
o
C
-
1.6
2.2
V
T
C
= +175
o
C
-
1.7
2.9
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
T
C
= +25
o
C
1.3
1.8
2.2
V
Gate Series Resistance
R
1
T
C
= +25
o
C
-
75
-
Gate-Emitter Resistance
R
2
T
C
= +25
o
C
10
20
30
k
Gate-Emitter Leakage Current
I
GES
V
GE
=
10V
330
500
1000
A
Gate-Emitter Breakdown Voltage
BV
GES
I
GES
=
2mA
12
14
-
V
Current Turn-Off Time-Inductive Load
t
D(OFF)I
+
t
F(OFF)I
I
C
= 7A, R
L
= 28
R
G
= 25
, L = 550
H,
V
CL
= 300V, V
GE
= 5V,
T
C
= +175
o
C
-
7
-
s
Inductive Use Test
I
SCIS
L = 2.3mH,
V
G
= 5V,
T
C
= +175
o
C
12
-
-
A
T
C
= +25
o
C
17
-
-
A
Thermal Resistance
R
JC
-
-
1.5
o
C/W
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
I
CE
, COL
L
E
C
T
OR-
E
M
I
T
T
ER CURR
E
N
T
(
A
)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, V
CE
= 10V
20
15
10
5
0
25
2
1
3
4
5
+25
o
C
+175
o
C
-40
o
C
I
CE
, CO
L
L
ECT
O
R-
EM
IT
T
E
R
CURRENT
(
A
)
40
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, T
C
= +25
o
C
0
2
4
6
8
10
10V
5.0V
4.5V
3.0V
2.5V
4.0V
3.5V
10
0
30
4
V
CE(SAT)
, SATURATION VOLTAGE (V)
I
CE
, COL
L
E
CT
OR EM
IT
T
E
R CURRENT
(
A
)
25
20
15
10
5
0
30
5
3
2
1
0
T
C
= +175
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
35
10
+25
o
C
I
CE
, C
O
L
L
ECT
O
R
EM
IT
T
E
R
CURRENT
(
A
)
V
CE(SAT)
, SATURATION VOLTAGE (V)
+175
o
C
-40
o
C
15
20
25
30
35
0
5
0
1
2
3
4
5
V
GE
= 4.5V
V
CE
(
S
A
T
)
, S
A
T
URA
T
ION
V
O
L
T
A
GE
(V
)
T
J
, JUNCTION TEMPERATURE (
o
C)
-25
+25
+75
+125
+175
1.25
1.15
1.05
1.35
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
I
CE
= 7A
T
J
, JUNCTION TEMPERATURE (
o
C)
V
CE
(S
A
T
)
, S
A
T
URA
T
ION
V
O
L
T
A
G
E
(V
)
-25
+25
+75
+125
+175
2.00
1.75
1.50
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 5.0V
I
CE
= 14A
2.25
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
+25
+50
+75
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
COL
L
ECT
O
R-
EM
I
T
T
E
R CURRENT
(
A
)
0
+100
+175
2
4
6
8
10
12
16
18
V
GE
= 5V
14
20
T
J
, JUNCTION TEMPERATURE (
o
C)
-25
+25
+75
+125
+175
V
GE
(
T
H
)
,
NO
RM
AL
IZ
ED T
HRESHO
L
D V
O
L
T
A
G
E
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
CE
= 1ma
T
J
, JUNCTION TEMPERATURE (
o
C)
L
E
AKA
GE C
URRE
N
T
(
A)
1E-1
1E0
1E1
1E2
1E3
1E4
+20
+60
+100
+140
+180
V
ECS
= 20V
V
CES
= 250V
T
J
, JUNCTION TEMPERATURE (
o
C)
t
(O
F
F
)
I
,
T
URN
OF
F
T
I
M
E
(
s) 6.0
5.0
4.5
4.0
3.5
3.0
+25
+50
+ 75
+100
+150
+175
+125
5.5
6.5
V
CE
= 300V, V
GE
= 5V
R
GE
= 25
, L = 550
H
7.0
R
L
= 37
, I
CE
= 7A
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
L, INDUCTANCE (mH)
0
2
4
6
8
10
20
10
I
C
, INDUCT
I
V
E
S
W
I
T
CHING
CURRENT
(
A
)
15
5
25
+25
o
C
+175
o
C
V
GE
= 5V
0
2
4
6
8
10
L , INDUCTANCE (mH)
E
AS
,
ENERG
Y
(
m
J
)
150
200
250
300
350
400
450
500
550
600
650
+25
o
C
+175
o
C
V
GE
= 5V
C, CAP
A
C
IT
ANCE (
p
F
)
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
400
600
800
1400
1600
1800
2000
C
RES
C
OES
C
IES
1200
1000
FREQUENCY = 1MHz
200
0
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
0
5
15
20
25
30
V
CE
,
COL
L
ECT
O
R-
EM
IT
T
E
R V
O
L
T
A
G
E (
V
)
V
GE
,
G
A
TE
-EM
I
TTE
R
V
O
L
T
A
G
E (
V
)
REF I
G
= 1mA, R
L
= 1.7
, T
C
= +25
o
C
10
V
CE
= 12V
V
CE
= 4V
V
CE
= 8V
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.02
0.05
0.5
Z
JC
,
N
O
R
M
A
LI
ZE
D T
H
ERM
A
L
R
E
SPO
NSE
0.2
0.1
0.01
t
1
t
2
PD
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
SINGLE PULSE
R
GE
, GATE-TO- EMITTER RESISTANCE (
)
0
2000
4000
6000
8000
10000
325
330
335
340
345
350
355
BV
CE
R
,
COL
L
ECT
O
R-
EM
IT
T
E
R
25
o
C
175
o
C
BKDN V
O
L
T
A
G
E
(
V
)
R
G
G
C
E
V
DD
2.3mH
DUT
R
GEN
= 25
5V
R
GEN
= 50
+
-
V
CC
DUT
300V
10V
C
G
E
R
GE
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
L = 550
H
R
L
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Handling Precautions for IGBT's
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler's body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBT's are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT's can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as
"ECCOSORBD LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating -The gate-voltage rating of V
GEM
may be exceeded if I
GEM
is limited to 10mA.
Trademark Emerson and Cumming, Inc
.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
Rev. H4
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SMART STARTTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
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