FEATURES
Data rate up to 2.5Gb/s
-32dBm typ. sensitivity
30m active area APD
chip with GaAs pre-
amplifier
Small co-axial package
with single mode fiber
APPLICATIONS
High bit rate long haul optical transmission systems operating
at 2.5Gb/s
DESCRIPTION
These APD preamplifiers use an InGaAs APD chip with
GaAs IC preamplifier. The KT package is designed for a horizontal
PC board mount. The LT package is secured by a vertical flange.
Each package is connected with single mode fiber by Nd: YAG
welding. The detector preamplifier is DC coupled and has a
low electrical output when the APD is illuminated.
Edition 1.0
March 1999
1
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
KT
LT
Edition 1.0
March 1999
2
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
Parameter
APD Responsivity
APD Breakdown Voltage
Maximum Overload
Symbol
R15
R13
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,310/1,550nm, Vss=-5.2V, unless
otherwise specified)
VB
Bandwidth
Sensitivity
BW
Power Supply Current
Iss
Parameter
Storage Temperature
Operating Temperature
Supply Voltage
APD Reverse Voltage
Symbol
Tstg
-40 to +85
-40 to +85
-7 to 0
0 to VB
V
V
C
C
Top
Vss
VR (Note 1)
APD Reverse Current
0.6
mA
IR (Note 2)
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25C, unless otherwise specified)
Pr
Po
A/W
A/W
dBm
V
mA
Unit
GHz
V
dBm
Limits
-
-
-30
Max.
0.80
0.75
-
1.8
40
65
-
-31
dBm
-
-5
-
dBm
-
-7
-
-32
2.0
Equivalent Input
Noise Current Density
in
pA/ Hz
8
-
6.5
50
Temperature Coefficient of VB
V/
C
0.08
0.15
0.12
AC Transimpedance
Zt
400
-
600
0.85
0.85
-
-5.2
40
-
-
-
Min.
Typ.
-31
-
Test Conditions
1,550nm, M=1
1,310nm, M=1
Power Supply Voltage
Vss
-4.94
-5.46
Tc=-40 to +85
C
2.488Gb/s NRZ,
PRBS=2
23
-1,
B.E.R.=10
-10
,
VR is set at
optimum value
Tc=-40 to +85
C,
M=3
2.488Gb/s NRZ, M=3,
PRBS=2
23
-1,
B.E.R.=10
-10
,
VR is set at
optimum value
AC-Coupled, RL=50
,
Average within BW
AC-Coupled, RL=50
,
M=3 to 15,
-3dBm from 1MHz
AC-Coupled, f=100MHz,
RL=50
,
Pin <-20dBm,
Note 3
ID=10
A
Note: (1) VB differs from device to device. VB data is attached to each devices.
(2) CW condition
(3)
=dVB/dTC
Edition 1.0
March 1999
3
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
Fig. 2 Relative Frequency Response
Relative Response (3dB/div)
Frequency, f (GHz)
3.0
1.5
0
Tc = 25C
Vss=-5.2V
AC-Coupled
RL=
50
Pin=-30dBm
= 1,310/1,550nm
Fig. 1 Output Characteristics
Output Voltage Peak to Peak, Vpp(mV)
Average Photocurrent, Ip.ave (mA)
0.5
0.5
0.4
0.4
M=15
M=10
M=5
0.3
0.3
0.2
0.2
0.1
0.1
0
0
0.6
0.6
0.7
Zt ~ 600
Tc = 25C
Vss=-5.2V
AC-Coupled
RL=
50
100Mb/s
Duty 50%
Mark density 50%
Fig.3 Equivalent Input Noise Current Density
Equivalent Input Noise Current Density,
in (pA/sqr. Hz)
Frequency, f (GHz)
2.0
1.0
0
0
5
10
Tc = 25C
Vss=-5.2V
AC-Coupled
RL=
50
Fig.4 Eye Diagram with a 1,550nm,
2.5Gb/s NRZ, 2
23
-1 PRBS incident signal
100ps/div
Input optical wave form with Bessel filter
Equivalent output wave form at
Pin=-32dBm, Tc=25
C, M=optimum
Edition 1.0
March 1999
4
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
Fig.5 Bit Error Rate
Bit Error Rate
Received Optical Power (dBm)
-30
-25
Tc=+25
C
+85
C
-40
C
-35
-40
10
-12
10
-10
10
-8
10
-6
10
-4
=1,310/1,550nm
2.5Gb/s, NRZ
Vss=-5.2V
M=Optimum
Duty 50%
Mark Density 50%
2-C1.5
8.4
0.2
8.4
0.2
4.2
0.2
2.0
0.1
14.0
0.15
17.0
0.2
VR
OUT
GND
VSS
10.0 MIN
2.5
0.1
4.4 MAX
32.0 MAX
1000 MIN
4-
0.45
0.05
6.0 MAX
7.2 MAX
0.9
0.1
GND
VSS
VR
OUT
P.C.D. 4.0
0.2
P.C.D. 2.0
0.2
"KT" PACKAGE
7.6 MAX
2.5
0.1
GND
VSS
VR
OUT
17.0
0.2
14.0
0.15
10.0 MIN
1.0
0.1
32.0 MAX
1000 MIN
P.C.D. 4.0
0.2
4-
0.45
0.05
P.C.D. 2.0
0.2
6.0 MAX
7.2 MAX
0.9
VR
OUT
GND
VSS
"LT" PACKAGE
UNIT: mm
UNIT: mm
Edition 1.0
March 1999
5
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0200M200
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FME, QDD
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division
Global Sales Support Department
Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku,
Shinjuku-ku, Tokyo, 163-0721, Japan
TEL: +81-3-5322-3356
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