1
Edition 1.2
July 1999
FHX45X
GaAs FET & HEMT Chips
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
10
40
85
45
65
-
-0.1
-1.0
-2.0
-3.0
-
-
-
0.55
0.65
10.0
12.0
-
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
VDS = 2V, IDS = 10mA,
f = 12GHz
IGS = -10A
mA
mS
V
V
dB
dB
gm
Vp
VGSO
NF
Gas
Condition
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
Channel to Case
-
155
200
C/W
Thermal Resistance
Rth
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
3.5
-3.0
290
-65 to +175
175
V
V
mW
C
C
Pt*
Tstg
Tch
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.1 and -0.075 mA respectively with
gate resistance of 4000.
3. The operating channel temperature (Tch) should not exceed 80C.
Gate
Drain
Source
Gate
FEATURES
Low Noise Figure: 0.55dB (Typ.)@f=12GHz
High Associated Gain: 12.0dB (Typ.)@f=12GHz
Lg 0.15m, Wg = 280m
Gold Gate Metallization for High Reliability
DESCRIPTION
The FHX45X is a Super High Electron Mobility Transistor
(SuperHEMT
TM
) intended for general purpose, ultra-low noise and high
gain amplifiers in the 2-18GHz frequency range. The device is well
suited for telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FHX45X
GaAs FET & HEMT Chips
NF & Gas vs. IDS
NF & Gas vs. Frequency
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
FHX45X NOISE PARAMETERS
VDS=2V, IDS=10mA
3
4
f=12GHz
VDS=2V
Freq.
(GHz)
opt
(MAG) (ANG)
NFmin
(dB)
Rn/50
VDS=2V
IDS=10mA
Gas
Gas
NF
NF
2
1
0
12
13
14
11
10
9
8
7
10
20
30
2
4
6 8 10 12 20
1
2
3
4
Drain Current (mA)
Frequency (GHz)
Drain-Source Voltage (V)
Noise Figure (dB)
50
40
30
0
10
2
3
1
0
10
15
5
0
Drain Current (mA)
Noise Figure (dB)
Associated Gain (dB)
Associated Gain (dB)
2
4
6
8
10
12
14
16
18
0.83
0.72
0.65
0.62
0.61
0.60
0.58
0.55
0.47
12.7
28.2
45.2
62.6
79.4
94.5
106.7
115.0
118.4
0.28
0.30
0.34
0.39
0.47
0.55
0.67
0.81
1.00
0.21
0.19
0.17
0.15
0.13
0.11
0.10
0.09
0.09
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
-1.0V
POWER DERATING CURVE
50
100
150
200
Ambient Temperature (C)
350
300
250
200
150
100
0
0
50
Total Power Dissipation (W)
Ga (max) & |S21|2 vs. FREQUENCY
VDS=2V
IDS=10mA
Ga (max)
|S21|2
15
20
10
5
0
4
6
8 1012
20
Frequency (GHz)
Gain (dB)
3
FHX45X
GaAs FET & HEMT Chips
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S
21
|
SCALE FOR |S12|
0.16
0.04 0.08 0.12
2
1
3
4
0.1 GHZ
0.1 GHZ
0.1 GHZ
0.1 GHZ
10
5
5
15
15 10
10
18 GHz
10
15
1
1
18 GHz
5
5
1
18 GHz
1
18 GHz
5
100
10
25
50
S-PARAMETERS
VDS = 2V, IDS = 10mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
1.000
-1.4
6.039
178.9
.002
89.3
.533
-0.9
500
0.998
-6.8
6.025
174.4
.009
86.4
.531
-4.6
1000
0.991
-13.6
5.981
168.8
.017
82.8
.528
-9.2
2000
0.966
-27.0
5.818
157.8
.033
75.9
.516
-18.0
3000
0.928
-39.9
5.572
147.4
.048
69.6
.497
-26.4
4000
0.883
-52.1
5.277
137.7
.060
64.1
.475
-34.2
5000
0.835
-63.6
4.959
128.8
.070
59.3
.452
-41.4
6000
0.788
-74.5
4.640
120.5
.078
55.4
.430
-48.0
7000
0.744
-84.8
4.333
112.9
.085
52.3
.408
-54.0
8000
0.705
-94.5
4.046
105.8
.090
49.9
.389
-59.6
9000
0.671
-103.8
3.782
99.3
.094
48.1
.372
-64.9
10000
0.642
-112.7
3.542
93.2
.097
46.9
.358
-70.0
11000
0.618
-121.1
3.324
87.5
.100
46.2
.346
-74.9
12000
0.599
-129.3
3.126
82.1
.103
46.0
.336
-79.7
13000
0.584
-137.1
2.948
77.0
.106
46.2
.329
-84.4
14000
0.573
-144.6
2.786
72.1
.109
46.7
.323
-89.0
15000
0.566
-151.7
2.639
67.4
.112
47.3
.319
-93.7
16000
0.561
-158.5
2.504
62.9
.116
48.2
.317
-98.4
17000
0.560
-165.1
2.382
58.5
.120
49.1
.317
-103.1
18000
0.562
-171.3
2.268
54.3
.125
50.0
.318
-107.8
NOTE:*
The data includes bonding wires.
n: number of wires
Gate
n=2 (0.3mm length, 25m Dia Au wire)
Drain n=2 (0.3mm length, 25m Dia Au wire)
Source n=4 (0.3mm length, 25m Dia Au wire)
Download S-Parameters, click here
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
4
CHIP OUTLINE
(Unit: m)
90
70
100
45020
160
350
20
75
60
50
Die Thickness:
10020m
Gate
Drain
Source
Gate
65
FHX45X
GaAs FET & HEMT Chips
SuperHEMT
TM
is a trademark of Fujitsu Limited.
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