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Электронный компонент: RD65FV

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RD65FV
1/7
www.dynexsemi.com
FEATURES
s
Optimised For High Current Rectifiers
s
High Surge Capability
s
Very Low On-state Voltage
APPLICATIONS
s
Electroplating
s
Power Supplies
s
Welding
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
RD65FV04
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
RRM
600V
I
F(AV)
(max)
11745A
I
FSM
(max)
162000A
RD65FV
Rectifier Diode
Target Information
Replaces November 2000, version DS5408-1.1
DS5408-2.0 October 2001
Fig. 1 Package outline
Outline type code: V
(See Package Details for further information)
Conditions
V
RSM
= V
RRM
600
500
400
300
200
100
RD65FV06
RD65FV05
RD65FV04
RD65FV03
RD65FV02
RD65FV01
Part and Ordering
Number
Repetitive Peak
Reverse Voltage
V
RRM
V
RD65FV
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Symbol
I
F(AV)
I
F(RMS)
I
F
I
F(AV)
I
F(RMS)
I
F
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
11120
17500
16000
7200
11300
9450
Parameter
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Single Side Cooled
Double Side Cooled
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
11745
A
-
18450
A
-
16974
A
Half wave resistive load
7632
A
-
11988
A
-
10079
A
T
case
= 85
o
C unless otherwise stated
RD65FV
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Units
mA
A
C
V
m
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 175C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 175C
V
R
= 0
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
130
84.5 x 10
6
162
132 x 10
6
Test Conditions
At V
RRM
, T
case
= 200C
I
F
= 2000A, dI
RR
/dt = 3A/
s,
T
case
= 200C, V
R
= 100V
At T
vj
= 200C
At T
vj
= 200C
Parameter
Peak reverse current
Peak reverse recovery current
Total stored charge
Threshold voltage
Slope resistance
CHARACTERISTICS
Symbol
I
RM
I
rr
Q
S
V
TO
r
T
Max.
150
230
39
0.6
0.0225
Min.
-
-
-
-
-
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 43.0kN
Double side
(with mounting compound)
Single side
Forward (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.0075
0.015
0.015
0.002
0.004
225
200
200
47.3
Min.
-
-
-
-
-
-
-
55
38.7
RD65FV
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CURVES
Fig. 2 Maximum (limit) forward characteristics
Fig. 3 Power dissipation
Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt
0.1
1.0
10
100
Rate of decay of forward current dI/dt - (A/s)
10000
1000
100
Stored charge Q
S
- (
C)
I
RM
Q
S
I
F
dI/dt
Conditions:
T
j
= 200C
V
R
= 100V
I
F
= 2000A
1000
100
10
Reverse recovery current I
RR
- (A)
Max. Q
S
Max. I
RR
0
1000
2000
3000
4000
5000
6000
7000
8000
0.5
0.55
0.6
0.65
0.7
0.75
0.8
Instantaneous forward voltage, V
F
- (V)
Instantaneous forward current, I
F
- (A)
T
j
= 200C
0
2000
4000
6000
8000
10000
12000
14000
16000
0
2000
4000
6000
8000
10000
12000
14000
Mean forward current, I
F(AV)
- (A)
Mean power dissipation - (W)
dc
1/2 wave
3 phase
6 phase
RD65FV
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Fig. 5 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
@ T
case
= 175C)
Fig. 6 Maximum (limit) transient thermal impedance
1
10
1
2 3 5
10
20
50
40
80
120
160
200
240
280
40
60
20
80
100
I
2
t value - (A
2
s x 10
6
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
I
2
t =
2
x t
2
0.001
0.01
0.1
1.0
10
100
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance -

C/W
Double side cooled
Anode side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.0075
0.0085
0.0092
0.0120
Anode side
0.015
0.016
0.0167
0.0194
RD65FV
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Holes 3.6 x 2.0 deep (In both electrodes)
73 nom
Cathode
Anode
27.0
25.4
73 nom
112.5 max
Nominal weight: 1100g
Clamping force: 43kN 10%
Package outine type code: V
Note:
1. Package maybe supplied with pins and/or tags.
RD65FV
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS5408-2 Issue No. 2.0 October 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.