GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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FEATURES
s
Non Punch Through Silicon
s
Isolated Copper Baseplate
s
Low Inductance Internal Construction
APPLICATIONS
s
High Power Inverters
s
Motor Controllers
s
Induction Heating
s
Resonant Converters
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MHS12
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
200A
I
C(PK)
(max)
400A
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5
DS5296-1.5 November 2000
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: M
(See package details for further information)
3(C
1
)
2(E
2
)
1(E
1
C
2
)
11(C
2
)
9(C
1
)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
1
2
3
11
10
8
9
5
4
6
7
GP200MHS12
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
DC, T
case
= 72C
1ms, T
case
= 72C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
W
V
Max.
1200
20
200
400
1490
2500
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
84
160
15
150
125
125
5
5
Min.
-
-
-
-
-
40
-
-
GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 200A
I
F
= 200A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
12
1
6.5
3.5
4.0
200
400
2.4
2.5
-
-
Typ.
-
-
-
-
2.7
3.2
-
-
2.2
2.3
25
30
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP200MHS12
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
700
200
35
550
110
30
20
Typ.
500
150
25
400
80
20
13
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 200A, V
R
= 50% V
CES
,
dI
F
/dt = 2500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
800
250
50
650
150
55
45
Typ.
600
200
40
500
110
40
35
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 200A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical turn-on energy vs collector current
0
50
100
150
300
350
400
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
250
200
0
50
100
150
300
350
400
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
250
200
0
200
50
Collector current, I
C
- (A)
0
40
Turn-on energy, E
ON
- (mJ)
T
j
= 125C
V
GE
=
15V
V
CE
= 600V
A: R
g
= 10
B: R
g
= 6.2
C: R
g
= 4.7
A
B
C
50
60
10
20
30
100
150
Fig. 6 Typical turn-off energy vs collector current
0
200
50
100
Collector current, I
C
- (A)
0
5
15
50
Turn-off energy, E
OFF
- (mJ)
T
j
= 125C
V
GE
=
15V
V
CE
= 600V
A: R
g
= 10
B: R
g
= 6.2
C: R
g
= 4.7
A
B
C
20
25
30
35
40
45
150
10
GP200MHS12
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 9 Diode typical forward characteristics
Fig. 10 Reverse bias safe operating area
Fig. 7 Diode typical turn-off energy vs collector current
Fig. 8 Typical switching characteristics
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
175
200
Collector current, I
T
- (A)
Diode turn-off energy, E
off(diode)
- (mJ)
T
case
= 25C
T
case
= 125C
V
GE
=
15V
V
CE
= 900V
0
150
50
100
Collector current, I
C
- (A)
0
400
900
Switching times, - (ns)
T
j
= 125C
V
GE
=
15V
V
CE
= 600V
R
g
= 4.7
t
f
t
d(off)
t
r
t
d(on)
600
500
100
300
200
700
800
200
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V
F
- (V)
F
orw
ard current, I
F
- (A)
T
j
= 125C
T
j
= 25C
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
50
s
100
s
I
C
max. (single pulse)
I
C
max. DC (continuous)
t
p
= 1ms
GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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Fig. 11 Forward bias safe operating area
0
50
100
150
200
250
300
350
400
450
500
0
200
400
600
800
1000
1200
Collector-emitter voltage, V
ce
- (V)
RBSOA
Collector current, I
C
- (A)
T
case
= 125C
V
ge
=
15V
R
g
= 4.7
*
*Recommended minimum value
Fig. 12 Transient thermal impedance
1
10
100
1000
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (
C/kW )
Diode
Transistor
Fig. 13 3 Phase inverter operating frequency
Fig. 14 DC current rating vs case temperature
0
50
100
150
200
250
300
350
400
450
500
1
10
50
f
max
- (kHz)
In
v
e
r
ter phase current, I
C(PK)
- (A)
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
Conditions:
T
j
= 125
C, T
c
= 75
C,
R
g
= 4.7
, V
CC
= 600V
0
40
80
120
160
200
240
280
320
0
20
40
60
10
30
50
80
70
90 100 110 120 130
Case temperature, T
case
- (C)
Collector current, I
C
- (A)
GP200MHS12
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
23
8
106
0.8
108
0.8
3x M6
93
0.3
1
48
0.3
62
0.8
4x Fast on
tabs
28
0.5
28
0.5
38max
2
3
10
11
9
8
4
5
7
6
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
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ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with Concept gate drivers
AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
GP200MHS12
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2000 Publication No. DS5296-1 Issue No.1.5 November 2000
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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