DGT408BRP
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FEATURES
s
Reverse Blocking Capability
s
Double Side Cooling
s
High Reliability In Service
s
High Voltage Capability
s
Fault Protection Without Fuses
s
High Surge Current Capability
s
Turn-off Capability Allows Reduction In Equipment Size
And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
APPLICATIONS
s
Variable speed A.C. motor drive inverters (VSD-AC)
s
Uninterruptable Power Supplies
s
High Voltage Converters
s
Choppers
s
Welding
s
Induction Heating
s
DC/DC Converters.
KEY PARAMETERS
I
TCM
800A
V
DRM
/V
RRM
4500V
dV
D
/dt
1000V/
s
di
T
/dt
300A/
s
VOLTAGE RATINGS
4500
DGT408BRP4540
Conditions
Type Number
T
vj
= 115
o
C, I
DM
= 50mA,
I
RRM
= 50mA
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
4500
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= V
DRM
, T
j
= 115
o
C, di
GQ
/dt = 30A/
s, Cs = 2.0
F
RMS on-state current
A
A
A
800
-
-
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
DGT408BRP
Reverse Blocking Gate Turn-off Thyristor
Target Information
DS4415-2.1 February 2002
Fig. 1 Package outline
Outline type code: P
(See Package Details for further information)
DGT408BRP
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SURGE RATINGS
Conditions
6.0
0.18 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 115
o
C
10ms half sine. T
j
=115
o
C
di
T
/dt
Critical rate of rise of on-state current
300
-
V/
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 115
o
C
I
TSM
Symbol
Parameter
I
2
t
V
D
= 3000V, I
T
= 800A, T
j
= 115
o
C, I
FG
> 30A,
Rise time > 1.5
s
A/
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 115
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
15
60
-
20
15
-
-
s
100
70
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
s
A/
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.1
-
0.009
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.041
o
C/W
Anode side cooled
o
C/W
0.07
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
15.0
11.0
-40
kN
o
C/W
Clamping force 12.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
-
L
S
Peak stray inductance in snubber circuit
200
nH
DGT408BRP
3/6
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CHARACTERISTICS
T
j
= 115
o
C unless stated otherwise
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
-
V
RGM
= 16V, No gate/cathode resistor
C
I
T
= 800A, V
DM
= 3000V
Snubber Cap Cs = 2.0
F,
di
GQ
/dt = 30A/
s
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
4.7
V
V
DRM
= 4500V, V
RG
= 0V
-
50
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.0
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.5
A
mA
mJ
1200
-
V
D
= 3000V
I
T
= 800A, dI
T
/dt = 300A/
s
I
FG
= 30A, rise time < 1.5
s
s
1.5
-
-
5.0
s
-
3000
mJ
-
15.0
s
s
1.5
-
s
15.5
-
-
-
C
-
850
A
At 800A peak, I
G(ON)
= 4A d.c.
DGT408BRP
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Anode voltage and current
VD
0.9VD
0.1VD
td
tr
tgt
IT
VDP
0.9IT
ITAIL
dVD/dt
VD VDM
Gate voltage and current
tgs
tgf
tw1
VFG
IFG
0.1IFG
dIFG/dt
0.1IGQ
QGQ
0.5IGQM
IGQM
VRG
V(RG)BR
IG(ON)
tgq
Recommended gate conditions:
I
TCM
= 800A
I
FG
= 30A
I
G(ON)
= 4A d.c.
t
w1(min)
= 20s
I
GQM
= 300A
di
GQ
/dt = 30A/s
Q
GQ
=
V
RG(min)
= 2V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Fig.2 General switching waveforms
DGT408BRP
5/6
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20
Gate
38 nom
56 max
57.5 max
63.5 max
38 nom
51 nom
Cathode
Anode
27.0
25.5
18 nom
2 holes 3.6
0.1 x 1.95
0.05 deep
Auxiliary cathode
Nominal weight: 350g
Clamping force: 12kN
10%
Lead length: 505mm
Package outine type code: P
Weight: 350g
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
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