DS30167 Rev. 3 - 2
1 of 2
MMSTA55/MMSTA56
www.diodes.com
MMSTA55/MMSTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMSTA05/MMSTA06)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
M
J
L
E
D
B C
H
K
G
B
E
C
Mechanical Data
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMSTA55 Marking K2H, K2G (See Page 2)
MMSTA56 Marking K2G (See Page 2)
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Characteristic
Symbol
MMSTA55
MMSTA56
Unit
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-60
-80
V
Emitter-Base Voltage
V
EBO
-4.0
V
Collector Current - Continuous (Note 1)
I
C
-500
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
8
All Dimensions in mm
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
E
B
C
DS30167 Rev. 3 - 2
2 of 2
MMSTA55/MMSTA56
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMSTA55
MMSTA56
V
(BR)CBO
-60
-80
V
I
C
= -100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
MMSTA55
MMSTA56
V
(BR)CEO
-60
-80
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-4.0
V
I
E
= -100
mA, I
C
= 0
Collector Cutoff Current
MMSTA55
MMSTA56
I
CBO
-100
nA
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
Collector Cutoff Current
MMSTA55
MMSTA56
I
CEX
-100
nA
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
100
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
V
I
C
= -100mA, I
B
= -10mA
Base- Emitter Saturation Voltage
V
BE(SAT)
-1.2
V
I
C
= -100mA, V
CE
= -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
50
MHz
V
CE
= -1.0V, I
C
= -100mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Ordering Information
(Note 3)
Device
Packaging
Shipping
MMSTA55-7
MMSTA56-7
SOT-323
3000/Tape & Reel
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2x
YM
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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