DS30379 Rev. 1 - 1
1 of 4
ASMCC0096
www.diodes.com
ASMCC0096
APPLICATION SPECIFIC MULTI CHIP CIRCUIT
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly
Processes
Features
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram Below
Marking: A96
Date Code & Marking Information: See Page 2
Weight: 0.008 grams (approx.)
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
Maximum Ratings, Total Device
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Maximum Ratings, NPN Transistor Element
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous (Note 1)
I
C
200
mA
Maximum Ratings, Zener Element
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Forward Voltage @ I
F
= 10mA
V
F
0.9
V
T
C
U
D
O
R
P
W
E
N
A
1
E
1
K
1
NC
C
1
B
1
MMBT3904
UDZ5V6B
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0
8
All Dimensions in mm
DS30379 Rev. 1 - 1
2 of 4
ASMCC0096
www.diodes.com
Electrical Characteristics, NPN Transistor Element
@ T
A
= 25
C unless otherwise specified
Notes:
2. Short duration test pulse used to minimize self-heating effect.
T
C
U
D
O
R
P
W
E
N
Electrical Characteristics, Zener Element
@ T
A
= 25
C unless otherwise specified
Type
Number
Zener Voltage Range (Note 2)
Maximum Zener Impedance
Maximum Reverse
Leakage Current
V
Z
@ I
ZT
I
ZT
Z
ZT @
I
ZT
Z
ZK
@ I
ZK
= 0.5mA
I
R
@ V
R
Nom (V)
Min (V)
Max (V)
mA
W
mA
V
UDZ5V6B
5.6
5.49
5.73
5
60
200
1.0
2.5
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
V
I
E
= 10
mA, I
C
= 0
Collector Cutoff Current
I
CEX
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
40
70
100
60
30
300
I
C
= 100A, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
0.65
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
10
k
W
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5
8.0
x 10
-4
Small Signal Current Gain
h
fe
100
400
Output Admittance
h
oe
1.0
40
mS
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
5.0
dB
V
CE
= 5.0V, I
C
= 100
mA,
R
S
= 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35
ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Rise Time
t
r
35
ns
Storage Time
t
s
200
ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
t
f
50
ns
@ T
A
= 25
C unless otherwise specified
DS30379 Rev. 1 - 1
3 of 4
ASMCC0096
www.diodes.com
T
C
U
D
O
R
P
W
E
N
Device
Packaging
Shipping
ASMCC0096-7
SOT-363
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information
(Note 3)
Marking Information
A96
YM
A96 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30379 Rev. 1 - 1
4 of 4
ASMCC0096
www.diodes.com
T
C
U
D
O
R
P
W
E
N
0.1
1
10
0.1
1
10
100
1000
V
,
BASE-EMITTER
(
V)
BE(SA
T
)
SA
TURA
TION
VOL
T
AGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
(Transistor Element)
I
C
I
B
= 10
0.01
0.1
1
0.1
1
10
100
1000
V
,
COLLECT
O
R-EMITTER
(V)
CE(SA
T
)
SA
TURA
TION
VOL
T
AGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
(Transistor Element)
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
(Transistor Element)
T = -25C
A
T = +25C
A
T = 125C
A
V
= 1.0V
CE
0
5
15
10
0.1
1
10
100
C
,
INPUT
CAP
ACIT
ANCE
(pF)
IBO
C
,
OUTPUT
CAP
A
CIT
A
NCE
(pF)
OBO
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
(Transistor Element)
Cibo
Cobo
f = 1MHz
0
50
25
50
75
100
125
150
175
200
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
100
150
200
0
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