DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3150
type is a NPN Silicon Power Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, high gain, fast
switching applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25C)
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
5.0
A
Base Current
IB
1.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
62.5
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=50V
1.0
A
IEBO
VEB=7.0V
1.0
A
BVCEO
IC=10mA
25
V
VCE(SAT)
IC=3.0A, IB=150mA
0.35
V
VCE(SAT)
IC=4.0A, IB=200mA
0.50
V
VBE(SAT)
IC=3.0A, IB=150mA
1.10
V
VBE(SAT)
IC=4.0A, IB=200mA
1.40
V
hFE
VCE=2.0V, IC=500mA
250
550
hFE
VCE=2.0V, IC=2.0A
150
hFE
VCE=2.0V, IC=5.0A
50
fT
VCE=6.0V, IC=50mA, f=200MHz
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
50
pF
CZT3150
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R4 (17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT3150
SURFACE MOUNT
NPN SILICON POWER
TRANSISTOR
R4 (17-June 2004)
MIN
MAX
MIN
MAX
A
0
10
0
10
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15
0.091
0.181
4.60
2.30
15
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
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