MAXIMUM RATINGS (TA=25
0
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
70
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
3.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
0
C
Thermal Resistance
JA
62.5
0
C/W
ELECTRICAL CHARACTERISTICS(TA=25
0
C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=80V
1.0
A
IEBO
VEB=5.0V
1.0
A
BVCBO
IC=50A
120
160
V
BVCEO
IC=10mA
70
90
V
BVEBO
IE=50A
7.0
15
V
VCE(SAT)
IC=2.0A, IB=200mA
250
500
mV
VBE(ON)
IC=2.0A, VCE=1.0V 0.95
1.1
V
hFE
VCE=5.0V, IC=10mA
100
170
hFE
VCE=5.0V, IC=500mA
100
165
300
hFE
VCE=5.0V, IC=3.0A
40
75
fT
VCE=10V, IC=500mA, f=1.0MHz
8.0
MHz
CZT3120
SURFACE MOUNT
NPN SILICON SWITCHING
POWER TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R2 (17-June 2004)
DESCRIPTION:
The Central Semiconductor CZT3120 NPN
Switching Power Transistor, manufactured by the
epitaxial planar process, combines both power
and high speed switching characteristics in a
SOT-223 Surface Mount Package. Typical
applications include drivers, DC-DC converters,
and general fast switching applications.
MARKING CODE: FULL PART NUMBER
MIN
MAX
MIN
MAX
A
0
10
0
10
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15
0.091
0.181
4.60
2.30
15
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT3120
SURFACE MOUNT
NPN SILICON SWITCHING
POWER TRANSISTOR
R2 (17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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