MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCER
70
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
6.0
A
Base Current
IB
3.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
62.5
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEO
VCE=30V
700
A
ICEV
VCE=100V, VEB=1.5V
1.0
mA
IEBO
VEB=7.0V
5.0
mA
BVCER
IC=30mA, RBE=100
70
V
BVCEO
IC=30mA
60
V
* VCE(SAT) IC=4.0A, IB=400mA
1.1
V
* VBE(ON) VCE=4.0V, IC=4.0A
1.5
V
* hFE
VCE=4.0V, IC=4.0A
20
70
* hFE
VCE=4.0V, IC=6.0A
5.0
fT
VCE=10V, IC=500mA, f=1.0MHz
2.5
MHz
* Pulsed, 2% D.C.
CZT2955 PNP
CZT3055 NPN
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R3 (17-June 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
MARKING CODE: FULL PART NUMBER
MIN
MAX
MIN
MAX
A
0
10
0
10
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15
0.091
0.181
4.60
2.30
15
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT2955 PNP
CZT3055 NPN
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
R3 (17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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