DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT250K
type is an NPN silicon Darlington transistor man-
ufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed
for applications requiring extremely high gain.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
1.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
62.5
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=30V
100
nA
BVCBO
IC=10A
50
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100A
10
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
250,000
hFE
VCE=5.0V, IC=100mA
250,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
CZT250K
SURFACE MOUNT
NPN EXTREMELY HIGH hFE
SILICON DARLINGTON TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R2 ( 17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT250K
SURFACE MOUNT
NPN EXTREMELY HIGH hFE
SILICON DARLINGTON TRANSISTOR
R2 ( 17-June 2004)
MIN
MAX
MIN
MAX
A
0
10
0
10
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15
0.091
0.181
4.60
2.30
15
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
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