DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3150
type is a NPN Silicon Power Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, high gain, fast
switching applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
5.0
A
Base Current
IB
1.0
A
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=50V
1.0
A
IEBO
VEB=7.0V
1.0
A
BVCEO
IC=10mA
25
V
VCE(SAT)
IC=3.0A, IB=150mA
0.5
V
VCE(SAT)
IC=4.0A, IB=200mA
0.6
V
VBE(SAT)
IC=3.0A, IB=150mA
1.10
V
VBE(SAT)
IC=4.0A, IB=200mA
1.40
V
hFE
VCE=2.0V, IC=500mA
250
550
hFE
VCE=2.0V, IC=2.0A
150
hFE
VCE=2.0V, IC=5.0A
50
fT
VCE=6.0V, IC=50mA, f=200MHz
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
50
pF
CXT3150
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R5 (04-May 2005)
P
PO
OW
WE
ER
R
89
TM
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT3150
SURFACE MOUNT
NPN SILICON POWER
TRANSISTOR
R5 (04-May 2005)
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