Central

Semiconductor Corp.

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CPD80

Switch Diode

High Voltage Switching Diode Chip

PRINCIPAL DEVICE TYPES

CMPD2003
CMPD2004

1N3070

CMDD2003
CMDD2004

GEOMETRY

PROCESS DETAILS

BACKSIDE CATHODE

R2 (22-October 2003)

Process

EPITAXIAL PLANAR

Die Size

16 x 16 MILS

Die Thickness

9.0 MILS

Anode Bonding Pad Area

6.5 x 6.5 MILS

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 18,000�

GROSS DIE PER 4 INCH WAFER