145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
CR6A2GPP Series
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (16-September 2003)
Process
GLASS PASSIVATED MESA
Die Size
98 x 98 MILS
Die Thickness
10.4 MILS
Anode Bonding Pad Area
82.5 x 82.5 MILS
Top Side Metalization
Au - 5,000
Back Side Metalization
Au - 2,000
GROSS DIE PER 4 INCH WAFER
1,170
Central
Semiconductor Corp.
TM
PROCESS
CPD07
General Purpose Rectifier
8 Amp Glass Passivated Rectifier Chip
Central
Semiconductor Corp.
TM
PROCESS
CPD07
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (16-September 2003)
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