Central
Semiconductor Corp.
TM
PROCESS
CP616
Small Signal Transistor
PNP - Silicon RF Transistor Chip
PRINCIPAL DEVICE TYPES
CM5160
Process
EPITAXIAL PLANAR
Die Size
21.7 x 21.7 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
3.5 MILS DIAMETER
Emitter Bonding Pad Area
3.5 x 3.5 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 10,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
BACKSIDE COLLECTOR
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
24,790
Central
Semiconductor Corp.
TM
PROCESS
CP616
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
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