Central
Semiconductor Corp.
TM
PROCESS
CP211
Power Transistor
NPN - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N3054A
CJD41C
TIP41C
Process
EPITAXIAL BASE
Die Size
80 x 99 MILS
Die Thickness
12.5 MILS
Base Bonding Pad Area
12 x 32 MILS
Emitter Bonding Pad Area
13 x 48 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Cr/Ni/Ag 16,000
PROCESS DETAILS
GEOMETRY
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-September 2003)
GROSS DIE PER 4 INCH WAFER
1,450
Central
Semiconductor Corp.
TM
PROCESS
CP211
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-September 2003)
Central
Semiconductor Corp.
TM
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