PROCESS

PRINCIPAL DEVICE TYPES

PROCESS
DIE SIZE
DIE THICKNESS
BASE BONDING PAD AREA
EMITTER BONDING PAD AREA
TOP SIDE METALIZATION
BACK SIDE METALIZATION

145 Adams Avenue

Hauppauge, NY 11788 USA

Phone

(631) 435-1110

Fax

(631) 435-1824

w w w . c e n t r a l s e m i . c o m

PROCESS DETAILS

Please refer to
selection guide on page .

GEOMETRY

Central

Semiconductor Corp.

CP189

EPITAXIAL BASE
80 x 80 MILS
12 MILS
12 x 18 MILS
13 x 28 MILS
Al - 30,000�
Cr/Ni/Ag - Ni-6,000�; Ag-10,000�

CJD41C

TIP41C

NPN - Amp/Switch Transistor Chip

BACKSIDE COLLECTOR

Power Transistors