MAXIMUM RATINGS: (TA=25C)
NPN
PNP
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
60
V
Collector-Emitter Voltage
VCEO
40
60
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=50V
10
nA
ICBO
VCB=60V, TA=125C
10
A
ICBO
VCB=50V, TA=125C
10
A
IEBO
VEB=3.0V 10
nA
ICEV
VCE=60V, VEB=3.0V
10
nA
ICEV
VCE=30V, VBE=0.5V
50
nA
BVCBO
IC=10A
75
60
V
BVCEO
IC=10mA
40
60
V
BVEBO
IE=10A
6.0
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
2.6
V
hFE
VCE=10V, IC=0.1mA
35
75
hFE
VCE=10V, IC=1.0mA
50
100
hFE
VCE=10V, IC=10mA
75
100
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
50
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
CMXT2207
SURFACE MOUNT
SUPERminiTM
DUAL COMPLEMENTARY
SILICON TRANSISTOR
SOT-26 CASE
Central
Semiconductor Corp.
TM
R2 (06-August 2003)
DESCRIPTION
:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERminiTM surface mount package, designed for
small signal general purpose and switching applications.
MARKING CODE: X07
1
2
3
6
5
4
Q1
Q2
Central
Semiconductor Corp.
TM
SOT-26 CASE - MECHANICAL OUTLINE
CMXT2207
SURFACE MOUNT
SUPERminiTM
DUAL COMPLEMENTARY
SILICON TRANSISTOR
R2 (06-August 2003)
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: X07
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
pF
Cib
VEB=2.0V, IC=0, f=1.0MHz
30
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
k
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
x10-4
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
mhos
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
mhos
rb'Cc
VCB=10V, IE=20mA, f=31.8MHz
150
ps
NF
VCE=10V, IC=100mA, RS=1.0k, f=1.0kHz
4.0
dB
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
ns
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