DESCRIPTION:
The CENTRAL
SEMICONDUCTOR
CMXSH-3 type contains three (3) Isolated
Schottky Silicon Switching Diodes, manu-
factured by the epitaxial planar process,
epoxy molded in a super-mini surface
mount package, designed for applications
requiring low forward voltage drop.
Marking code is XH3.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
30
V
Continuous Forward Current
IF
100
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10 ms
IFSM
750
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100C
25
100
A
BVR
IR=100A
30
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.40
0.45
V
VF
IF=100mA
0.74
1.00
V
CT
VR=1.0V, f=1.0MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMXSH-3
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
SCHOTTKY
SWITCHING DIODE
SOT-26 CASE
Central
Semiconductor Corp.
TM
R1 ( 14-Sept 2000)
Lead Code
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-26 CASE
CMXSH-3
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
SCHOTTKY
SWITCHING DIODE
All Dimensions in Inches (mm)
Pin Configuration
R1 ( 14-Sept 2000)
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