DESCRIPTION:
The CENTRAL
SEMICONDUCTOR
CMXD2004 type contains three (3) Isolated
High Voltage Silicon Switching Diodes,
manufactured by the epitaxial planar
process, epoxy molded in a super-mini
surface mount package, designed for
applications requiring high voltage
capability. Marking code is X04.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
240
V
Peak Repetitive Reverse Voltage
VRRM
300
V
Peak Repetitive Reverse Current
IO
200
mA
Continuous Forward Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp=1 ms
IFSM
4000
mA
Forward Surge Current, tp=1 s
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNIT
IR
VR=240V
100
nA
IR
VR=240V, TA=150C
100
A
BVR
IR=100A
300
V
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
5.0
pF
trr
IF=IR=30mA, Rec. To 3.0mA, RL=100
50
ns
CMXD2004
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH VOLTAGE
SWITCHING DIODE
SOT-26 CASE
Central
Semiconductor Corp.
TM
R1 ( 14-Sept 2000)
Lead Code
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-26 CASE
CMXD2004
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH VOLTAGE
SWITCHING DIODE
All Dimensions in Inches (mm)
Pin Configuration
R1 ( 14-Sept 2000)
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