Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
166
SOT-23 CASE
CMPT3019
NPN SILICON TRANSISTOR
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPT3019 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for very high current, general
purpose amplifier applications.
Marking Code is C3A.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
500
A
Collector Current (Peak)
ICM
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=90V
10
nA
IEBO
VEB=5.0V
10
nA
BVCBO
IC=100
A
120
V
BVCEO
IC=30mA
80
V
BVEBO
IE=100
A
7.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.2
V
VCE(SAT)
IC=500mA, IB=50mA
0.5
V
VBE(SAT)
IC=150mA, IB=15mA
1.1
V
hFE
VCE=10V, IC=0.1mA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
fT
VCE=10V, IC=50mA, f=1.0MHz 100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
12
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
60
pF
NF
VCE=10V, IC=100mA, RS=1k
, f=1.0kHz
4.0
dB
PDF 
ZIP