CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON SWITCHING DIODE
SERIES CONNECTION
SOT-23 CASE
Central
Semiconductor Corp.
TM
R2 (6-August 2003)
DESCRIPTION:
The Central Semiconductor CMPD7000E is an
Enhanced version of the CMPD7000 Dual,
Series Configuration, Ultra-High Speed
Switching Diode. This device is manufactured by
the epitaxial planar process, in an epoxy molded
surface mount SOT-23 package, designed for
high speed switching applications.
MARKING CODE: C5CE
FEATURED ENHANCED SPECIFICATIONS:
BVR from 100V min to 120V min.
VF from 1.1V max to 1.0V max.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
120
V
Average Forward Current
IO
200
mA
Peak Forward Current
IFM
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
120
150
V
IR
VR=50V
300
nA
IR
VR=50V, TA=125C
100
A
IR
VR=100V
500
nA
VF
IF=1.0mA
0.55
0.59
0.65
V
VF
IF=10mA
0.67
0.72
0.77
V
VF
IF=100mA
0.85
0.91
1.0
V
CT
VR=0, f=1 MHz
1.5
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
2.0
4.0
ns
Enhanced Specification
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON SWITCHING DIODE
SERIES CONNECTION
R2 (6-August 2003)
MARKING
CODE: C5CE
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
2
3
1
D1
D2
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