170
Central
Semiconductor Corp.
TM
^
SOT-23 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPD2003,
CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004C, and CMPD2004S types are silicon
switching diodes manufactured by the epitaxial
planar process, designed for applications
requiring high voltage capability.
The following configurations are available:
CMPD2003
SINGLE
MARKING CODE: A82
CMPD2003C
DUAL, COMMON CATHODE
MARKING CODE: C3C
CMPD2003S
DUAL, IN SERIES
MARKING CODE: C3S
CMPD2004
SINGLE
MARKING CODE: D53
CMPD2004C
DUAL, COMMON CATHODE
MARKING CODE: DB7
CMPD2004S
DUAL, IN SERIES
MARKING CODE: DB6
MAXIMUM RATINGS (TA=25C)
CMPD2003
CMPD2004
CMPD2003C
CMPD2004C
SYMBOL
CMPD2003S
CMPD2004S
UNITS
Continuous Reverse Voltage
VR
200
240
V
Peak RepetitiveReverse Voltage
VRRM
250
300
V
Peak Repetitive Reverse Current
IO
200
200
mA
Continuous Forward Current
IF
250
225
mA
Peak Repetitive Forward Current
IFRM
625
625
mA
Forward Surge Current, tp=1 ms
IFSM
4000
4000
mA
Forward Surge Current, tp=1 s
IFSM
1000
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
Q
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
CMPD2003
CMPD2004
CMPD2003C CMPD2004C
CMPD2003S
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
UNIT
BVR
IR=100mA
250
300
V
IR
VR=200V
100
-
nA
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
'
'
171
IR
VR=200V, TA=150C
100
-
mA
IR
VR=240V
-
100
nA
IR
VR=240V, TA=150C
-
100
mA
VF
IF=100mA
1.0
1.0
V
VF
IF=200mA
1.25
-
V
CT
VR=0, f=1 MHz
5.0
5.0
pF
trr
IF=IR=30mA, Rec. TO 3.0mA, RL=100W
50
50
ns
CMPD2003
CMPD2004
CMPD2003C
CMPD2004C
CMPD2003S
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNIT
0$;,080
120,1$/
0$;,080
120,1$/
All Dimensions in Inches (mm).
$
&
&
$&
&&
$
$
$
1&
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
R3
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