MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100C
25
100
A
BVR
IR=100A
40
50
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.37
0.42
V
VF
IF=100mA
0.61
0.80
V
VF
IF=200mA
0.65
1.0
V
CT
VR=1.0V, f=1 MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMOSH-4E
SURFACE MOUNT
ENHANCED SPECIFICATION
SILICON SCHOTTKY DIODE
SOD-523 CASE
Central
Semiconductor Corp.
TM
R1 (24-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-4E
is an Enhanced version of the CMOSH-3 Silicon
Schottky Diode in an SOD-523 Surface Mount
Package.
Enhanced specification.
Additional Enhanced specification.
MARKING CODE: 4E
ENHANCED SPECIFICATIONS:
I
F
from 100mA max to 200mA max.
B
VR
from 30V min to 40V min.
V
F
from 1.0V max to 0.8V max.
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