DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-3
type is a Silicon Schottky diode, epoxy molded in
an ULTRAmini
TM
surface mount package,
designed for fast switching applications requiring
a low forward voltage drop. Marking code is 53.
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
30
V
Continuous Forward Current
IF
100
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100
A
30
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.40
0.45
V
VF
IF=100mA
0.74
1.00
V
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100C
25
100
A
CT
VR=1.0V, f=1 MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMOSH-3
ULTRAmini
TM
SURFACE MOUNT
SCHOTTKY DIODES
SOD-523 CASE
Central
Semiconductor Corp.
TM
R1 ( 20-July 2001)
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