FEATURES:
DUAL OPPOSING (DO) SCHOTTKY DIODES
HIGH VOLTAGE (70V)
LOW FORWARD VOLTAGE
GALVANICALLY ISOLATED
DESCRIPTION:
The Central Semiconductor CMKD6263DO incorporates two galvanically isolated, High Voltage, low VF
Silicon Diodes with an opposing Anode/Cathode configuration, in a space saving SOT-363 surface
mount package. These diodes are designed for fast switching applications requiring a low forward
voltage drop. Marking code is 63D.
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
70
V
Continuous Forward Current
IF
15
mA
Forward Surge Current, tp=1.0 s
IFSM
50
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=50V
98
200
nA
BVR
IR=10A
70
V
VF
IF=1.0mA
395
410
mV
CT
VR=0V, f=1.0MHz
2.0
pF
trr
IR=IF=10mA, Irr=1.0mA, RL=100
5.0
ns
CMKD6263DO
ULTRAmini
TM
DUAL OPPOSING
HIGH VOLTAGE
SCHOTTKY DIODES
SOT-363 CASE
Central
Semiconductor Corp.
TM
R0 ( 23-October 2001)
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