FEATURES:
MEETS GALVANIC ISOLATION
REQUIREMENTS OF IEEE 1394
HIGH VOLTAGE (70V)
ULTRAminiTM PACKAGE
REQUIRES LESS BOARD SPACE THAN 3
INDIVIDUAL DIODES
LOW FORWARD VOLTAGE
MAXIMUM RATINGS: PER DIODE (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
70
V
Continuous Forward Current
IF
15
mA
Forward Surge Current, tp=1.0 s
IFSM
50
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: PER DIODE (TA=25C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=10A
70
V
VF
IF=1.0mA
395
410
mV
IR
VR=50V
98
200
nA
CT
VR=0V, f=1.0MHz
2.0
pF
trr
I
R
=I
F
=10mA, I
rr
=1mA, R
L
=100
5.0
ns
CMKD6263
ULTRAmini
TM
TRIPLE ISOLATED
HIGH VOLTAGE
SCHOTTKY DIODE
SOT-363 CASE
Central
Semiconductor Corp.
TM
R0 ( 30-August 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263 contains three Galvanically isolated, High Voltage Silicon
Schottky diodes, epoxy molded in an ULTRAminiTM surface mount package, designed for fast switching
applications requiring a low forward voltage drop. MARKING CODE: K63.
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
Central
Semiconductor Corp.
TM
SOT-363 CASE - MECHANICAL OUTLINE
CMKD6263
TRIPLE ISOLATED
HIGH VOLTAGE
SCHOTTKY DIODE
R0 ( 30-August 2001)
MARKING CODE: K63
D1
D2
D3
PDF 
ZIP