DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6001
type contains three (3) Isolated Silicon Switching
Diodes, manufactured by the epitaxial planar
process, epoxy molded in a ULTRAmini
TM
surface
mount package, designed for switching
applications requiring extremely low leakage.
MARKING CODE: K01
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
500
mA
Forward Surge Current, tp=1 sec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=75V
500
pA
BVR
IR=100A
100
V
VF
IF=1.0mA
0.85
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CT
VR=0, f=1 MHz
2.0
pF
trr
IR=IF=10mA, RL=100 Rec. to 1.0mA
3.0
s
CMKD6001
SURFACE MOUNT
ULTRAmini
TM
TRIPLE ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
SOT-363 CASE
Central
Semiconductor Corp.
TM
R2 (7-August 2003)
Central
Semiconductor Corp.
TM
SOT-363 CASE - MECHANICAL OUTLINE
CMKD6001
SURFACE MOUNT
ULTRAmini
TM
TRIPLE ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
R2 (7-August 2003)
LEAD CODE:
1) ANODE D1
2) ANODE D2
3) ANODE D3
4) CATHODE D3
5) CATHODE D2
6) CATHODE D1
MARKING CODE: K01
PDF 
ZIP