DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD4448
type contains three (3) Isolated High Speed
Silicon Switching Diodes, manufactured by the
epitaxial planar process, epoxy molded in an
ULTRAminiTM surface mount package, designed
for applications requiring high speed switching
applications.
MARKING CODE: K48
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
500
mA
Forward Surge Current, tp=1ms
IFSM
4.0
A
Forward Surge Current, tp=1s
IFSM
1.0
A
Power Dissipation
PD
325
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
385
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=20V
25
nA
BVR
IR=5.0A
75
V
BVR
IR=100A
100
V
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
4.0
pF
trr
IR=IF=10mA, RL=100 Rec. to 1.0mA
4.0
ns
CMKD4448
SURFACE MOUNT
ULTRAminiTM
TRIPLE ISOLATED
HIGH SPEED
SILICON SWITCHING DIODES
SOT-363 CASE
Central
Semiconductor Corp.
TM
R3 (2-December 2003)
Central
Semiconductor Corp.
TM
CMKD4448
SURFACE MOUNT
ULTRAminiTM
TRIPLE ISOLATED
HIGH SPEED
SILICON SWITCHING DIODES
R3 (2-December 2003)
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) ANODE D1
2) ANODE D2
3) ANODE D3
4) CATHODE D3
5) CATHODE D2
6) CATHODE D1
MARKING CODE: K48
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