DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD2836
and CMKD2838 types consist of four high speed
switching diodes arranged in two electrically
isolated configurations (Common Anode and
Common Cathode). These devices are
manufactured by the epitaxial planar process, in
an epoxy molded ULTRAminiTM surface mount
package, designed for high speed switching
applications.
CMKD2836
CMKD2838
SURFACE MOUNT ULTRAmini
TM
DUAL PAIR
HIGH SPEED
SWITCHING SILICON DIODES
SOT-363 CASE
Central
Semiconductor Corp.
TM
R2 (18-March 2004)
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
75
V
Average Forward Current
IO
200
mA
Peak Forward Current
IFM
300
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
75
V
IR
VR=50V
100
nA
VF
IF=10mA
1.0
V
VF
IF=50mA
1.0
V
VF
IF=100mA
1.2
V
CT
VR=0, f=1 MHz
1.5
4.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
4.0
ns
The following configurations are available:
CMKD2836
DUAL PAIR, COMMON ANODE
MARKING CODE: K36
CMKD2838
DUAL PAIR, COMMON CATHODE
MARKING CODE: K38
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