DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHD4150
type is a high speed silicon switching diode
manufactured by the epitaxial planar process, in
an epoxy molded surface mount package,
designed for high speed switching applications.
Marking code is C50
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
50
V
Peak Repetitive Reverse Voltage
VRRM
50
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1 msec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
400
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
312.5
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=50V
100
nA
VF
IF=1.0mA
0.54
0.62
V
VF
IF=10mA
0.66
0.74
V
VF
IF=50mA
0.76
0.86
V
VF
IF=100mA
0.82
0.92
V
VF
IF=200mA
0.87
1.0
V
CT
VR=0, f=1 MHz
4.0
pF
trr
IR=IF=10mA, RL=100
, Rec. to 1.0mA
4.0
ns
CMHD4150
SURFACE MOUNT
HIGH SPEED SWITCHING DIODE
SOD-123 CASE
Central
Semiconductor Corp.
TM
R0 ( 24-August 2001)
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