PART NUMBER
UPC2756T
PACKAGE OUTLINE
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
I
CC
Circuit Current (no signal)
mA
3.5 6.0
8.0
f
RF
RF Frequency Response
(3 dB down from the gain at f
RF
= 900 MHz, f
IF
= 150 MHz) GHz
0.1
2.0
f
IF
IF Frequency Response
(3 dB down from the gain at f
RF
= 900 MHz, f
IF
= 150 MHz) MHz
10
300
CG
Conversion Gain
1
f
RF
= 900 MHz, f
IF
= 150 MHz
dB
11 14
17
f
RF
= 1.6 GHz, f
IF
= 20 MHz
dB
11 14
17
NF
Noise Figure f
RF
= 900 MHz, f
IF
= 150 MHz
dB
10
13
f
RF
= 1.6 GHz, f
IF
= 20 MHz
dB
13
16
P
SAT
Saturated Output Power
2
f
RF
= 900 MHz, f
IF
= 150 MHz
dBm
-11 -8
f
RF
= 1.6 GHz, f
IF
= 20 MHz
dBm
-15 -12
OIP
3
SSB Output 3rd Order Intercept Point
f
RF
= 0.8~2.0 GHz, f
IF
= 100 MHz
dBm
0
ISO
LO Leakage, f
LO
= 0.8 ~2.0 GHz at RF pin
dBm
-35
at IF pin
dBm
-23
PN
Phase Noise
3
, f
OSC
= 1.9 GHz
dBc/Hz
-68
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
C/W
620
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
C/W
230
FEATURES
3 V SILICON MMIC L-BAND
FREQUENCY DOWN CONVERTER
UPC2756T
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, Z
L
= Zs = 50
, Vcc = 3V)
WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz
ON BOARD OSCILLATOR
LOW CURRENT CONSUMPTION: 6 mA
SUPER SMALL T06 PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
Notes:
1. P
RF
= -40 dBm.
2. P
RF
= -10 dBm.
3. See Application Circuit.
DESCRIPTION
The UPC2756T is a silicon monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This device was designed as the first down converter for GPS
and wireless communications. Operating on a 3 volt supply,
this IC is ideally suited for hand held portable designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
California Eastern Laboratories
RF
Input
IF
Output
LO1
LO2
V
CC
GND
INTERNAL BLOCK DIAGRAM
TEST CIRCUIT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
Supply Voltage
V
5.5
P
T
Total Power Dissipation
2
mW
280
T
OP
Operating Temperature
C
-40 to +85
T
STG
Storage Temperature
C
-55 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85
C).
UPC2756T
Circuit Current, Icc (mA)
Circuit Current, Icc (mA)
Conversion Gain, CG (dB)
Conversion Gain, CG (dB)
CIRCUIT CURRENT vs. VOLTAGE
CONVERSION GAIN AND NOISE
FIGURE vs. RF INPUT FREQUENCY
Supply Voltage, Vcc (V)
Operating Temperature, T
OP
(
C)
CONVERSION GAIN
vs. IF OUTPUT FREQUENCY
CIRCUIT CURRENT vs. TEMPERATURE
RF Input Frequency, f
RF
(GHz)
IF Output Frequency, f
IF
(GHz)
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
UNITS
MIN
TYP MAX
V
CC
Supply Voltage
V
2.7
3.0
3.3
T
OP
Operating Temperature
C
-40
+25
+85
0 1 2 3 4 5 6
No input
signal
10
8
6
4
2
0
-40 -20 0 +20 +40 +60 +80 +100
10
8
6
4
2
0
No input signal
V
CC
= 3.0V
0.5 1.0 1.5 2.0
5
10
15
20
P
RFin
= -55 dbm
P
LOin
= -10 dbm
f
IF
= 150 MH
Z
(Low-Side Lo)
CG
V
CC
= 3.3V
V
CC
= 3.0V
NF
V
CC
= 2.7V
V
CC
= 3.0V
V
CC
= 3.3V
10
15
20
25
V
CC
= 2.7V
1 2 5 10 20 50 100 300
30
25
20
15
10
5
0
V
CC
= 3.0V
P
RFin
= -55 dBm
P
LOin
= -10 dBm
f
RF
= 1.6 GHz
IF coupling = 0.1 uF
0.1
F
0.1
F
0.1
F
0.1
F
C
2
C
1
C
3
C
5
1
2
3
4
5
6
3 V
LO
1
GND
RF
IN
LO
2
V
CC
IF
OUT
0.1
F
C
4
LO INPUT
IF OUTPUT
RF INPUT
5-190
UPC2756T SCATTERING PARAMETERS
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
UPC2756T
LO Leakage at RF Input Pin (dBm)
LO Input Frequency, f
LO
(GHz)
LO Input Frequency (GHz)
LO Leakage at IF Output Pin (dBM)
LO LEAKAGE AT RF PIN
vs. LO FREQUENCY
LO LEAKAGE AT IF PIN
Vs. LO FREQUENCY
1.4 1.6 1.8 2.0
0
-10
-20
-30
-40
-50
-60
V
CC
= 3.0 V
P
LO
IN
= -10 dBm
0.8 1.0 1.2 1.4 1.6
0
-10
-20
-30
-40
-50
-60
V
CC
= 3.0V
P
LO
IN
= -10 dBm
RF Port
Vcc = 3 V
1: 100 MHz 330.7
-- j861.6
2: 500 MHz 38.8
-- j194.3
3: 900 MHz 25.5
-- j107.6
4: 1500 MHz 20.5
-- j60.7
5. 1900 MHz 17.9
-- j44.2
6. 3000 MHz 19.5
-- j16.3
3
2
1
4
5
5
1
2
3
4
6
RF Port
Vcc = 3 V
1: 50 MHz 21.4
+ j2.4
2: 80 MHz 21.8
+ j5.5
3: 130 MHz 23.1
+ j9.4
4: 240 MHz 27.4
+ j16.3
5. 300 MHz 30.6
+ j19.1
5-191
APPLICATION CIRCUIT EXAMPLE
PART NUMBER
QTY
ORDERING INFORMATION
UPC2756T-E3
3K/Reel
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
1. RF INPUT
2. GND
3. LO
1
4. LO
2
5. V
CC
6. IF OUTPUT
OUTLINE DIMENSIONS
(Units in mm)
(Top View)
(Bottom View)
LEAD CONNECTIONS
+0.2
-0.3
2.8
1.5
+0.2
-0.1
1
2
3
4
5
6
1.90.2
-0.05
+0.10
0.3
0.130.1
1.1
+0.2
-0.1
0 to 0.1
0.95
0.95
0.8
2.90.2
PACKAGE OUTLINE T06
UPC2756T
3
2
1
4
5
6
3
2
1
4
5
6
C1W
Note:
All dimensions are typical unless otherwise specified.
3.10
3
2
1
1.0
MIN
1.0
MIN
6
5
4
0.95
0.5 MIN
Note:
Embossed Tape, 8 mm wide,
Pins 1, 2, 3 are in tape pull-out direction.
D1
BIAS
15 K
15 K
L
VARACTOR*
DIODES
R
1
R
2
C
2
C
1
C
5
3 V
C
3
3
2
1
4
5
6
5nH
30 nH
0.1
F
0.1
F
0.1
F
0.1
F
0.1
F
LO
1
LO
2
GND
Vcc
RF
IN
IF
OUT
* Recommended Varactor Diodes:
Alpha SMV1204-4,
Toshiba 1SV186
or equivalent
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -1/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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