Quad DMOS Analog Switch Driver
"Improved Performance Over
SD5000N and SD5400CY"
SD5300
FEATURES
Low Propagation Time . . . . . . . . . . . . . . . . . . . . . . . 1ns
Low On Resistance
Low Insertion Loss
Low Capacitance
Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . 3.6pF typ.
Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6pF typ.
Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6pF typ.
Low Crosstalk . . . . . . . . . . . . . . . . . . . . -107dB @ 4kHz
Input Transient Protection
APPLICATION
Analog Switch Driver
Wide Band Dual Differential Amplifiers
DESCRIPTION
The Calogic SD5300 is a monolithic array of 20V
enhancement-mode DMOS FET analog switch drivers. The
SD5300 is manufactured with implanted high-speed,
high-voltage and low resistance double-diffused MOS
(DMOS) process, and was designed to drive DMOS and other
analog switches. The devices are available in 16-pin plastic
DIP package and in a die form for hybrid applications.
Custom devices based on SD5300 can also be ordered.
ORDERING INFORMATION
Part
Package
Temperature Range
SD5300Y
SOIC
-55
o
C to +125
o
C
SD5300N
Plastic DIP
-55
o
C to +125
o
C
XSD5300
Sorted Chips in Carriers
-55
o
C to +125
o
C
CORPORATION
1
2
3
4
5
6
7
14
13
12
11
10
9
TOP VIEW
8
16
15
N/C
N/C
N/C
SUBSTRATE
D
2
2
G
2
S
1
S
1
G
D
1
D
4
4
G
4
S
3
S
3
G
D
3
TOP VIEW
N C
1
2
3
4
5
6
7
1 4
1 3
1 2
1 1
1 0
9
8
2
S
B o dy
2
G
2
D
3
G
3
S
3
D
1
S
1
G
1
D
4
D
4
G
4
S
FUNCTIONAL BLOCK DIAGRAM
SO PIN CONFIGURATION
SUBSTRATE
1
S
2
S
3
S
4
S
D
4
4
G
D
3
3
G
D
2
2
G
D
1
1
G
DUAL IN LINE PACKAGE
PIN CONFIGURATION
CD9
SD5300
CORPORATION
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C, unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
CONDITIONS
BV
DS
Drain-Source Breakdown Voltage
20
25
V
I
D
= 10
A, V
GS
= V
BS
= 0
BV
SB
Source-Substrate Breakdown
Voltage
20
25
I
S
= 10
A, V
GS
= 0, Drain Open
I
GBS
Gate-Body Leakage Current
1.0
A
V
GB
= 25V, V
DB
= V
SB
= 0
V
GS(th)
Gate-Source Threshold Voltage
0.5
2.0
V
V
DS
= V
GS
, I
D
= 1.0
A, V
SB
= 0
r
DS(on)
Drain-Source ON Resistance
40
45
ohms
V
GS
= 5V, I
D
= 1mA, V
SB
= 0
22
25
V
GS
= 10V, I
D
= 1mA, V
SB
= 0
17
20
V
GS
= 15V, I
D
= 1mA, V
SB
= 0
15
17
V
GS
= 20V, I
D
= 1mA, V
SB
= 0
g
fs
Common-Source Forward
Transconductance
10
12
mmhos
V
DS
= 10V, I
D
= 20mA, f = 1KHz, V
SB
= 0
c
(ga+gd+gb)
Gate Node Capacitance
2.4
3.7
pF
f = 1MHz, V
DS
= 10V, V
GS
= V
BS
= -15V
c
(gd+db)
Drain Node Capacitance
1.3
1.7
c
(gs+sb)
Source Node Capacitance
3.5
4.5
c
(dg)
Reverse Transfer Capacitance
0.3
.7
C
T
Cross Talk
-107
dB
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MAX. VALUE
UNITS
Breakdown Voltage
Drain-Source
Source-Drain
Drain-Substrate
Source-Substrate
Gate-Source
Gate-Substrate
Gate-Drain
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
20
20
25
25
25
25/-.3
25
V
Continuous Drain Current
I
D
50
mA
ABSOLUTE MAXIMUM
PARAMETER
SYMBOL
MAX. VALUE
UNITS
Drain Current
I
D
50
mA
Temperature Range
Operating
Storage
T
J
T
S
-55 to +85
-55 to +150
o
C
Power Dissipation
Package
Each
Device
P
D
P
D
640 (Note 1)
300 (Note 2)
mW
Notes:
1. Linear Derating Factor 10.7mW/
o
C above 25
o
C
2. Linear Derating Factor 5.0mW/
o
C above 25
o
C
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