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Электронный компонент: SD400

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High-Speed Analog
N-Channel/Enhancement-Mode
DMOS FETS
SD400 / SD402
FEATURES

Fast switching . . . . . . . . . . . . . . . . . . . . . . . . . . . t
on
<1ns

Low capacitance . . . . . . . . . . . . . . . . . . . C
rss
0.3 pF (typ)

Low threshold . . . . . . . . . . . . . . . . . . . . . . . . . <1.5V max

CMOS and TTL Compatible Input
APPLICATIONS

Switch Drivers

Video Switches

Active Pullups

VHF/UHF Amplifiers
DESCRIPTION
The SD400 and SD402 are N-Channel Enhancement Mode
devices processed utilizing Calogic's proprietary high speed,
low capacitance lateral DMOS technology. These devices are
excellent switch drivers where low threshold offers the
designer the advantage of CMOS and TTL compatibility with
ultra high switching speeds.
ORDERING INFORMATION
Part
Package
Temperature Range
SD400BD Plastic TO-92
-55
o
C to +125
o
C
SD402BD Plastic TO-92
-55
o
C to +125
o
C
XSD400
Sorted Chips in Carriers
-55
o
C to +125
o
C
XSD402
Sorted Chips in Carriers
-55
o
C to +125
o
C
CORPORATION
PIN CONFIGURATION
SCHEMATIC DIAGRAM
SOURCE
(1)
GATE
(3)
DRAIN
(2)
TO-92
S G
D
CD1-1
7-74
SD400 / SD402
CORPORATION
ABSOLUTE MAXIMUM RATINGS (T
C
= +25
o
C unless otherwise noted)
V
DS
Drain-Source Voltage
SD400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
SD402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
V
GS
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . -0.3 V
+20 V
V
DG
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . -0.3 V
+20 V
V
SD
Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . -0.3 V
I
D
Continuous Drain Current . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation (at or below T
C
= +25
o
C) . . 300mW
Linear Derating Factor. . . . . . . . . . . . . . . . 3.0 mW/
o
C
Operating Storage and
Junction Temperature Range . . . . . . -55
o
C to +125
o
C
ELECTRICAL CHARACTERISTICS (T
A
= +25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
SD400
SD402
UNIT
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
STATIC
BV
DSS
Drain-Source Breakdown Voltage
30
35
15
25
V
I
D
= 1.0
A, V
GS
= 0
I
D(OFF)
Drain-Source OFF Leakage Current
1.0
1.0
A
V
DS
= 15 V, V
GS
= 0
I
GSS
Gate-Source Leakage Current
1.0
1.0
A
V
GS
= 20 V, V
DS
= 0
I
D(ON)
Drain-Source ON Current
50
100
50
100
mA
V
DS
= 10 V, V
GS
= 10 V
Pulse Test
V
GS(th)
Gate-Source Threshold Voltage
0.7
1.5
0.7
1.5
V
I
D
= 1.0
A, V
DS
= V
GS
V
DS(ON)
Drain-Source ON Voltage
150
250
150
250
mV
I
D
= 1 mA, V
GS
= 2.4 V
r
DS(ON)
Drain-Source ON Resistance
150
250
150
250
ohms
V
DS(ON)
Drain-Source ON Voltage
60
80
60
80
mV
I
D
= 1 mA, V
GS
= 4.5 V
r
DS(ON)
Drain-Source ON Resistance
60
80
60
80
ohms
DYNAMIC
g
fs
Common-Source Forward
Transconductance
8.0
12
8.0
12
mS
I
D
= 20 mA, V
DS
= 10 V
f = 1 KHz Pulse Test
c
iss
Common-Source Input Capacitance
4.0
5.0
4.0
5.0
pF
V
DS
= 10 V, V
GS
= 0
f = 1 MHz
c
oss
Common-Source Output Capacitance
1.8
2.5
1.8
2.5
c
rss
Common-Source Reverse Transfer
Capacitance
0.3
0.5
0.3
0.5
t
d(ON)
Turn ON Delay Time
0.7
1.0
0.7
1.0
ns
V
DD
= 10 V, R
L
= 680
V
G(ON)
= 10 V, R
G
= 51
C
L
= 1.5 pF
t
r
Rise Time
0.8
1.0
0.8
1.0
t
(OFF)
Turn OFF Time
12
12
7-75