N-Channel Depletion Mode
Lateral DMOS FET
SD2100 / SST2100
FEATURES
Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . t
ON
1.0ns
Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . c
rss
2pf
Low R
ON
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
APPLICATIONS
Analog Switches
Amplifiers
DESCRIPTION
The SD2100/SST2100 is a depletion mode DMOS lateral FET
that provides ultra high speed switching with very low
capacitance. The product is available in TO-72 and surface
mount SOT-143.
ORDERING INFORMATION
Part
Package
Temperature Range
SD2100
TO-72
-55
o
C to +125
o
C
SST2100
SOT-143
-55
o
C to +125
o
C
XSD2100
Sorted Chips in Carriers -55
o
C to +125
o
C
CORPORATION
CONNECTION DIAGRAMS
2
3
BOTTOM VIEW
SOURCE
DRAIN
GATE
SUBSTRATE
1
2
3
4
1
4
3
2
4
1
TO-72
1
2
3
4
GATE
(3)
DRAIN
(2)
BODY
(4)
SOURCE
(1)
SOURCE
DRAIN
GATE
BODY
AND CASE
BODY IS INTERNALLY
CONNECTED TO THE CASE
(TOP VIEW)
1
3
4
2
CD1-2
PART MARKING (SOT-231)
SST2100
D10
SD2100 / SST2100
CORPORATION
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise noted)
SYMBOL
PARAMETER
TYP
1
MIN
MAX
UNIT
TEST CONDITIONS
STATIC
V
(BR)DS
Drain-Source Breakdown Voltage
25
15
V
V
GS
= V
BS
= -5V, I
D
= 1
A
I
GSS
Gate Reverse Current
0.05
1
nA
V
GS
=
25V, V
DS
= V
BS
= 0V
I
DSS
Saturation Drain Current
7
0.5
10
mA
V
DS
= 10V, V
GS
= V
BS
= 0V
V
GS(OFF
)
Gate-Source Cutoff
-1.5
-2
V
V
DS
= 10V, I
D
= 1
A, V
BS
= 0V
V
GS
Gate-Source Voltage
-0.3
-1
1
V
DG
= 10V
V
BS
= 0V
I
D
= 5mA
0.4
0
1.5
I
D
= 10mA
r
DS(ON)
Drain-Source On-Resistance
120
200
I
D
= 100
A
V
BS
= 0V
V
GS
= 0V
40
50
V
GS
= 5V
DYNAMIC
g
fs
Forward Transconductance
8000
1000
S
V
DS
= 10V, V
GS
= V
BS
= 0V, f = 1kHz
g
os
Output Conductance
250
500
g
fs
Forward Transconductance
10000
7000
V
DG
= 10V, V
BS
= 0V, I
D
= 10mA, f = 1kHz
g
os
Output Conductance
350
500
C
iss
Common-Source Input Capacitance
5
6
pF
V
DS
= 10V, f = 1MHz, V
GS
= V
BS
= -5V
C
rss
Reverse Transfer Capacitance
1
2
SWITCHING
t
d(ON)
Turn-ON Time
0.7
ns
V
DD
= 5V, R
L
= 680
, V
IN
= -4V to -2V
t
r
0.4
t
OFF
Turn-OFF Time
5
Note1: For design aid only, not subject to production testing.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise noted)
SYMBOL
PARAMETERS/TEST CONDITIONS
LIMITS
UNITS
V
GS
Gate-Source Voltage
25
V
V
DS
Drain-Source Voltage
25
I
D
Drain Current
50
mA
P
D
Power Dissipation
300
mW
Power Derating
2.4
mW/
o
C
T
J
Operating Junction Temperature
-55 to 150
o
C
T
stg
Storage Temperature
-55 to 150
T
L
Lead Temperature (1/16" from case for 10 sec.)
300
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