Dual N-Channel JFET
High Frequency Amplifier
2N5911 / 2N5912
FEATURES
Tight Tracking
Low Insertion Loss
Good Matching
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
One Side
Both Sides
Power Dissipation
367mW
500mW
Derate
above
25
o
C
3.0mW/
o
C
4.0mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N5911-12
Hermetic TO-99
-55
o
C to +150
o
C
X2N5912
Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
S2
G1
D2
D1
G2
S1
C
TO-99
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
I
GSS
Gate Reverse Current
-100
pA
V
GS
= -15V, V
DS
= 0
-250
nA
T
A
= 150
o
C
BV
GSS
Gate Reverse Breakdown Voltage
-25
V
I
G
= -1
A, V
DS
= 0
V
GS(off)
Gate-Source Cutoff Voltage
-1
-5
V
DS
= 10V, I
D
= 1nA
V
GS
Gate-Source Voltage
-0.3
-4
V
DG
= 10V, I
D
= 5mA
I
G
Gate Operating Current
-100
pA
-100
nA
T
A
= 150
o
C
I
DSS
Saturation Drain Current (Pulsewidth 300
s, duty cycle
3%)
7
40
mA
V
DS
= 10V, V
GS
= 0V
g
fs
Common-Source Forward Transconductance
5000
10,000
S
V
DG
= 10V, I
D
= 5mA
f = 1kHz
g
fs
Common-Source Forward Transconductance (Note 1)
5000
10,000
f = 100MHz
g
os
Common-Source Output Conductance
100
f = 1kHz
g
oss
Common-Source Output Conductance (Note 1)
150
f = 100MHz
C
iss
Common-Source Input Capacitance (Note 1)
5
pF
f = 1MHz
C
rss
Common-Source Reverse Transfer Capacitance (Note 1)
1.2
e
n
Equivalent Short Circuit Input Noise Voltage (Note 1)
20
nV
Hz
f = 10kHz
NF
Spot Noise Figure (Note 1)
1
dB
f = 10kHz
R
G
= 100k
CJ1
2N5911 / 2N5912
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N5911
2N5912
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
| I
G1
-I
G2
|
Differential Gate Current
20
20
nA
V
DG
= 10V, I
D
= 5mA
T
A
= 125
o
C
I
DSS1
I
DSS2
Saturation Drain Current Ratio
0.95
1
0.95
1
V
DS
= 10V, V
GS
= 0
(Pulsewidth 300
A, duty cycle
3%)
| V
GS1
-V
GS2
|
Differential Gate-Source Voltage
10
15
mV
V
DG
= 10V, I
D
= 5mA
| V
GS1
-
V
GS2
|
T
Gate-Source Voltage
Differential Drift (Measured at
end points, T
A
and T
B
)
20
40
V/
o
C
T
A
= 25
o
C
T
B
= 125
o
C
20
40
T
A
= -55
o
C
T
B
= 25
o
C
g
fs1
g
fs2
Transconductance Ratio
0.95
1
0.95
1
f = 1kHz
NOTE 1: For design reference only, not 100% tested.
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