Continental Device India Limited
Data Sheet
Page 1 of 3
MJE15028, 15030
NPN PLASTIC POWER TRANSISTORS
MJE15029, 15031
PNP PLASTIC POWER TRANSISTORS
High frequency Drivers in Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS
15028
15030
15029
15031
Collector-base voltage (open emitter)
V
CBO
max. 120
150 V
Collector-emitter voltage (open base)
V
CEO
max. 120
150 V
Collector current
I
C
max.
8.0
A
Total power dissipation up to T
C
= 25C
P
tot
max.
50
W
Junction temperature
T
j
max.
150
C
Collector-emitter saturation voltage
I
C
= 1A; I
B
= 0.1A
V
CEsat
max.
0.5
V
D.C. current gain
I
C
= 0.1 A; V
CE
= 2 V
h
FE
min.
40
RATINGS (at T
A
=25C unless otherwise specified)
15028
15030
15029
15031
Limiting values
Collector-base voltage (open emitter)
V
CBO
max. 120
150 V
Collector-emitter voltage (open base)
V
CEO
max. 120
150 V
MJE15028, MJE15030
MJE15029, MJE15031
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
D IM
M IN .
M A X.
A
l
l
di
m
i
ns
i
ons
i
n
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
D E G 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
Continental Device India Limited
Data Sheet
Page 2 of 3
Emitter base voltage (open collector)
V
EBO
max.
5.0
V
Collector current
I
C
max.
8.0
A
Collector current (Peak value)
I
C
max.
16
A
Base current
I
B
max.
2.0
A
Total power dissipation up to T
C
= 25C
P
tot
max.
50
W
Derate above 25C
max.
0.4
W/C
Total power dissipation up to T
A
= 25C
P
tot
max.
2.0
W
Derate above 25C
max.
0.016
W/C
Junction temperature
T
j
max.
150
C
Storage temperature
T
stg
65 to +150 C
THERMAL RESISTANCE
From junction to case
R
th jc
=
2.5
C/W
From junction to ambient
R
th ja
=
62.5
C/W
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
15028
15030
15029
15031
Collector cutoff current
I
B
= 0; V
CE
= 120V
I
CEO
max. 0.1
mA
I
B
= 0; V
CE
= 150V
I
CEO
max.
0.1 mA
I
E
= 0; V
CB
= 120V
I
CBO
max. 10
A
I
E
= 0; V
CB
= 150V
I
CBO
max.
10 A
Emitter cut-off current
I
C
= 0; V
EB
= 5V
I
EBO
max.
10
A
Breakdown voltages
I
C
= 10 mA; I
B
= 0
V
CEO(sus)
* min. 120
150 V
I
C
= 1 mA; I
E
= 0
V
CBO
min. 120
150 V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltage
I
C
= 1 A; I
B
= 0.1 A
V
CEsat
*
max.
0.5
V
Base emitter on voltage
I
C
= 1A; V
CE
= 2V
V
BE(on)
*
max.
1.0
V
D.C. current gain
I
C
= 0.1 A; V
CE
= 2 V
h
FE
*
min.
40
I
C
= 2 A; V
CE
= 2 V
h
FE
*
min.
40
I
C
= 3 A; V
CE
= 2 V
h
FE
*
min.
40
I
C
= 4 A; V
CE
= 2 V
h
FE
*
min.
20
Transition frequency f = 10 MHz
I
C
= 500 mA; V
CE
= 10 V
f
T
(1)
min.
30
MHz
* Pulse test: pulse width
300 s; duty cycle
2%.
(1) f
T
= |h
fe
| f
test
MJE15028, MJE15030
MJE15029, MJE15031
http://www.bocasemi.com
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