@vic
2N5551
NPN General Purpose Amplifier
FEATURES & USE
High Collector Breakdown Voltage; Low Noise;
Complementary to 2N5401
This device is designed as a general purpose amplifier and switch for
applications requiring high voltages.
TO 92
1.Emitter 2.Base 3.Collector
Absolute Maximum Ratings Ta = 25`C
Symbol Parameter Ratings
Units
V
CBO
Collector-Base Voltage
180
V
V
CEO
Collector-Emitter Voltage
160
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
600
mA
T
J
Junction Temperature
150
`C
T
STG
Storage Temperature
-55 - 150
`C
Electrical Characteristics Ta = 25`C
Symbol Parameter
Test
Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100AI
E
=0 180
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=1mAI
B
=0 160
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=100AI
C
=0 5
V
I
CBO
Collector Cut-off Current
V
CB
=120V, I
E
=0
200
nA
I
EBO
Emitter Cut-off Current
V
EB
=4V, I
C
=0
200
nA
H
FE
DC Current Gain
V
CE
=5V, I
C
=10mA 80
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
=50mA, I
B
=5mA
0.25
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
=50mA, I
B
=5mA
1.0
V
h
FE
Classification
Classification
A B1 B2 C1 C2 C3
h
FE
50-100 100-150 150-200 200-230 230-250 250-300
Copyright@vic
Electronics Corp. 1 Website:http://www.avictek.com
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