TARF1503Z
DESCRIPTION
The TARF1503Z is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave freque
ncies
It is suitable for a high density surface mount since
transistor has been SOT343 package
FEATURES
o Low Noise Figure
N.F = 1.1dB TYP. @ f=1GHz, V
CE
=8V, Ic=5mA
o High Gain
MAG = 19dB TYP. @ f=1GHz, V
CE
=8V, Ic=15mA
o High Transition Frequency
f
T
= 10GHz TYP. @ f=1GHz, V
CE
=8V, Ic=15mA
PIN CONFIGURATION
MARKING : AA1
MAXIMUM RATINGS
V
CBO
Collector-Base Voltage
Open Emitter
V
CEO
Collector-Emitter Voltage
Open Base
V
EBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
P
T
Total Power Dissipation
Ts = 60
T
STG
Storage Temperature
T
J
Operating Junction Temperature
1
B
Base
Emitter
Emitter
Collector
150
V
V
25
12
2.5
E
C
mW
150
-65 ~ 150
65
V
mA
SYMBOL
PARAMETER
CONDITION
VALUE
PIN NO
SYMBOL
DESCRIPTION
Unit
2
3
4
E
NPN Planer RF TRANSISTOR
1
2
3
4
SOT-343
unit : [mm]
www.tachyonics.co.kr
- 1/10 -
Sep-03-2002
TARF1503Z
Electrical Characteristics ( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
V
CE
=8V, Ic=5mA,f=1GHz
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, Ic = 15mA
V
CE
= 8V, Ic = 15mA
Output 3rd Intercept
CONDITION
Insertion Power Gain
V
CE
=8V, Ic=5mA,f=1GHz
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=15mA,f=1GHz
f
T
C
CB
Noise Resistance
Associated Gain
Minimum Noise Figure
V
CB
= 10V, f = 1MHz
0.55
100
10
GHz
n A
n A
rn
Maximum Stable Gain
[S21]
2
MSG
V
CE
=8V, Ic=5mA,f=1GHz
V
CE
=8V, Ic=5mA,f=1GHz
NFmin
VALUE
Unit
20
12
25
14
V
V
G
A
OIP
3
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=5mA,f=1GHz
14.5
17
12.5
dB
19
1.1
0.058
16
17
27
dBm
PARAMETER
CONDITION
SYMBOL
PARAMETER
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
min
typ
max
min
typ
max
300
100
150
VALUE
dB
dB
dB
pF
Unit
www.tachyonics.co.kr
- 2/10 -
Sep-03-2002
TARF1503Z
Intermodulation Intercept Point IP3=f(Ic)
C
CB
vs. V
CB
(Z
S
=Z
L
= 50
)
Fmin vs. Icc
Noise Figure Contours & Constant Gain
V
CE
= 8V, Icc = parameter, Zs = Zsopt
f = 1 GHz, V
CE
= 8V, Icc = 5mA
0.6
1.1
1.6
2.1
2.6
0
5
10
15
20
25
Icc [mA]
Fmin [dB]
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0
5
10
15
20
V
CB
[V]
Capacitance C
CB
[pF]
f = 1MHz
OPT
=0.32152
Fmin =1.0dB
=1.1dB
=1.2dB
=1.3dB
4 contour
Input Stable
Output Stable
Ga=16dB
=15dB
=14dB
=13dB
4 contour
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Ic [mA]
IP
3
[dbm]
V
CE
=8V
V
CE
=6V
V
CE
=3V
f = 1GHz
www.tachyonics.co.kr
- 5/10 -
Sep-03-2002
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