ChipFind - документация

Электронный компонент: SDB110Q

Скачать:  PDF   ZIP
KSD-E009-001
1
SDB110Q
Schottky Barrier Diode
Features
Low power rectified
Silicon epitaxial type
Battery changing diode
Ordering
Information
Type No.
Marking
Package Code
SDB110Q
S3
SOD-523

Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Anode
2. Cathode
1.6
0.1
0.8
0.1
1
1
2
1.2
0.1
0.2 Min.
0.6
0.1
0~0.1
2
KSD-E009-001
2
SDB110Q

Absolute maximum ratings (
Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Reverse voltage
V
R
10
V
Repetitive peak forward current
I
FRM
*
0.5
A
Forward current
I
F
30
mA
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ~ 150
C
* :
= D/T =0.33
(T<1S)
* : Unit ratings. Total rating=Unit rating
1.5
Electrical Characteristics (
Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Forward voltage 1
V
F(1)
I
F
=1m
A
0.1
-
0.3
V
Forward voltage 2
V
F(2)
I
F
=10mA
-
-
0.35
V
Reverse current
I
R
V
R
=5V
-
-
0.5
A
ESD-Capability
-
C=200pF, RL=100
Both forward reverse direction
5 pulse
225
-
V
KSD-E009-001
3
SDB110Q
Electrical Characteristic Curves
Fig. 1 I
F
-V
F
Fig. 2 I
R
-V
R