ChipFind - документация

Электронный компонент: ATR0786

Скачать:  PDF   ZIP
1
Features
Active Mixer with Conversion Gain
Integrated LO and IF Drivers
Excellent Linearity
Broadband 50
W Impedance on all Ports
Low LO-RF Leakage
Differential or Single Ended Inputs
Benefits
Small and Thin 16-pin SSOP Package with Exposed Paddle
Few External Components
Fully ESD Protected
Application
DCS/PCS/TDMA and CDMA2000 Transmitter
Other Digital Communication Applications
High Performance RF Instrumentation
Description
The ATR0786 is a high linearity active mixer which is manufactured using Atmels
advanced Silicon Germanium technology for the use in a variety of high performance
requiring RF systems such as digital communications.
This mixer features a frequency range of 1800 MHz to 2100 MHz. It operates from a
single 5 V supply and provides 16 dB of conversion gain while requiring only 0 dBm
input to the integrated LO driver. An IF and an LO amplifier is also included.
The ATR0786 incorporates internal matching on each RF, IF and LO port to enhance
ease of use and to reduce the external components required. The RF and LO inputs
can be driven differentially or single ended.
Figure 1. Block Diagram
RF_Out+
RF_Out-
LO_IN+
LO_IN-
IF_IN+
IF_IN-
8
9
4
5
13
12
High Linearity
Active Transmit
Mixer for
1800 MHz to
2100 MHz
ATR0786
Rev. 4587BSIGE02/03
2
ATR0786
4587BSIGE02/03
Pin Configuration
Figure 2. Pinning TSSOP16
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Gnd
Vcc
Gnd
RF_Out-
RF_Out+
Gnd
Vcc
IF_IN-
Gnd
Vcc
Gnd
LO_IN-
LO_IN+
Gnd
Vcc
IF_IN+
Pin Description
Pin
Symbol
Function
1
GND
Ground
2
Vcc
Supply voltage
3
GND
Ground
4
RF_OUT-
Negative RF output; nominal DC voltage is 2.3 V; (internally biased) input should be AC-
coupled
5
RF_OUT+
Positive RF output; nominal DC voltage is 2.3 V; (internally biased) input should be AC-
coupled
6
GND
Ground
7
Vcc
Supply voltage
8
IF_IN-
Negative IF input; nominal DC voltage is 2.3 V, provided through off chip inductors
9
IF_IN+
Positive IF input; nominal DC voltage is 2.3 V, provided through off chip inductors
10
Vcc
Supply voltage
11
GND
Ground
12
LO_IN+
Negative local oscillator input; nominal DC voltage is 2.3 V; (internally biased) input should be
AC-coupled
13
LO_IN-
Positive local oscillator input; nominal DC voltage is 2.3 V; (internally biased) input should be
AC-coupled
14
GND
Ground
15
Vcc
Supply voltage
16
GND
Ground
Paddle
Device Ground and heat sink, requires good thermal path; RF reference plane
3
ATR0786
4587BSIGE02/03
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltages, no RF applied
V
CC
-0.5 to +5.5
V
LO input signals
LO_IN-; LO_IN+
+10.0
dBm
IF input signals
IF_IN-; IF_IN+
+10.0
dBm
Operating case temperature
T
C
-40 to +85
C
Storage temperature
T
STG
-55 to +150
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
25
K/W
Electrical Characteristics
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static
conditions: V
CC
= +5.0 V, T
amb
= 25C; P
LO
= 0 dBm; IF = 200 MHz; P
IF
= -20 dBm
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
General Performance
Supply voltage
V
CC
4.75
5.0
5.25
V
Supply current
I
CC
200
mA
LO drive
Matched to 50
W
-3
0
+3
dBm
LO, IF, RF return loss
Matched to 50
W
14
dB
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
RF Electrical Characteristics (1800 MHz to 2000 MHz)
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static
conditions: V
CC
= +5.0 V, T
amb =
25C; P
LO
= 0 dBm; IF = 200 MHz; P
IF
= -20 dBm
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Mixer RF Performance
RF frequency
f
RF
1800
2000
MHz
LO frequency
f
LO
1600
1800
MHz
IF frequency
f
IF
30
200
400
MHz
Conversion gain
G
15
17
19
dB
SSB noise figure
NF
9.5
11.0
dB
Output IP3
IF1 = IF2 =
-20 dBm/tone,
1 MHz spacing
OIP3
20
24
dBm
Output P1dB
P1dB
8
11
dBm
Leakage (LO-RF)
-20
-10
dBm
Leakage (LO-IF)
-45
-35
dBm
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
ATR0786
4587BSIGE02/03
Typical Performance
Figure 3. Conversion Gain versus Frequency + Temperature
RF Electrical Characteristics (2000 MHz to 2100 MHz)
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static
conditions: V
CC
= +5.0 V, T
amb =
25C; P
LO
= 0 dBm; IF = 200 MHz; P
IF
= -20 dBm
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Mixer RF Performance
RF frequency
f
RF
2000
2100
MHz
LO frequency
f
LO
1800
2000
MHz
IF frequency
f
IF
30
200
400
MHz
Conversion gain
G
13
16
18
dB
SSB noise figure
NF
9.5
11.0
dB
Output IP3
IF1 = IF2 =
-20 dBm/tone,
1 MHz spacing
OIP3
17
21
dBm
Output P1dB
P1dB
6
9
dBm
Leakage (LO-RF)
-20
-10
dBm
Leakage (LO-IF)
-45
-35
dBm
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Conversion Gain vs Temperature
Plo=0 dBm
0
5
10
15
20
1800
1900
2000
2100
Frequency (MHz)
C
o
n
ver
si
o
n
G
a
i
n
(
d
B
)
85C
25C
-40C
5
ATR0786
4587BSIGE02/03
Figure 4. Output IP3 versus Frequency + Temperature
Figure 5. Output IP3 versus Frequency + LO Drive
Figure 6. Conversion Gain versus Frequency + LO Drive
Output IP3 vs Temperature
Plo=0 dBm
10
15
20
25
30
1800
1900
2000
2100
Fre que ncy (M Hz)
Ou
tp
u
t
IP3
(d
Bm
)
85C
25C
-40C
Output IP3 vs LO Drive
T=25 C
10
15
20
25
30
1800
1900
2000
2100
Fre que ncy (M Hz)
O
u
t
put
I
P
3 (
d
B
m
)
-3 dBm
0 dBm
+3 dBm
Conversion Gain vs LO Drive
T=25 C
0
5
10
15
20
1800
1900
2000
2100
Frequency (MHz)
C
onver
si
on G
a
i
n
(
d
B
)
-3 dBm
0 dBm
+3 dBm