MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
3.0
A
Peak Pulse Current
ICM
6.0
A
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=20V
100
nA
IEBO
VEB=5.0V
100
nA
BVCBO
IC=10A
45
V
BVCEO
IC=10mA
15
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=100mA, IB=1.0mA
30
50
mV
VCE(SAT)
IC=1.0A, IB=20mA
60
150
mV
VCE(SAT)
IC=2.0A, IB=200mA
85
200
mV
VCE(SAT)
IC=3.0A, IB=60mA
145
300
mV
hFE
VCE=2.0V, IC=500mA
200
hFE
VCE=2.0V, IC=1.0A
200
hFE
VCE=2.0V, IC=3.0A
175
Cob
VCB=10V, f=1.0MHz
100
pF
fT
VCE=10V, IC=500mA
100
MHz
CXT3090L
SURFACE MOUNT
LOW VCE(SAT)
NPN SILICON POWER TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R2 (20-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3090L is
a Low VCE(SAT) NPN Transistor in a Power
SOT-89 surface mount package, designed for
DC-DC converters for mobile systems and LAN
cards, motor control, power management and
strobe flash units.
MARKING CODE: FULL PART NUMBER
POWER
89
TM
MIN
MAX
MIN
MAX
A
0.055 0.067
1.40
1.70
B
C
0.014 0.018
0.35
0.46
D
0.173 0.185
4.40
4.70
E
0.064 0.074
1.62
1.87
F
0.146 0.177
3.70
4.50
G
0.090 0.106
2.29
2.70
H
0.028 0.051
0.70
1.30
J
0.014 0.019
0.36
0.48
K
0.017 0.023
0.44
0.58
L
M
SOT-89 (REV: R4)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
4 4
0.059
0.118
1.50
3.00
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT3090L
SURFACE MOUNT
LOW VCE(SAT)
NPN POWER TRANSISTOR
R2 (20-May 2004)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
BOTTOM VIEW
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