Document Outline
- List of Figures
- 1. Typical Gain vs. Power Out
- 2. Device Current vs. Voltage
- 3. Output Power at 1 dB Gain Compression, Third Order Intercept Point vs. Current
- 4. Output Power at 1 dB Gain Compression vs. Temperature
- 5. Gain vs. Frequency
- 6. VSWR vs. Frequency
- Features
- Description
- Typical Push-Pull Biasing Configuration
- 230 mil BeO Flange Package
- MSA-1023 Absolute Maximum Ratings
- Electrical Specifications
- MSA-1023 Typical Scattering Parameters
- Typical Performance
- 230 mil BeO Flange Package
6-446
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
High Output Power:
+27 dBm Typical P
1dB
at 1.0 GHz
Low Distortion:
37 dBm Typical IP
3
at 1.0 GHz
8.5 dB Typical Gain at
1.0 GHz
Hermetic, Metal/Beryllia
Stripline Package
Impedance Matched to 25
for Push-Pull Configurations
MSA-1023
230 mil BeO Flange
Package
Description
The MSA-1023 is a high perfor-
mance, medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a hermetic, BeO flange package
for good thermal characteristics.
Typical Push-Pull Biasing Configuration
C
block
C
block
C
block
C
block
R
bias
R
bias
V
CC
>
20
V
V
d
= 15 V
RFC
50
RFC
IN
OUT
V
CC
>
20
V
MSA
MSA
4
1
1
2
4
3
3
2
50
This MMIC is designed for use in a
push-pull configuration in a 25
system. The MSA-1023 can also be
used as a single-ended amplifier in
a 50
system with slightly
reduced performance. Typical
applications include narrow and
broadband RF amplifiers in
industrial and military systems.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9554E
6-447
MSA-1023 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
425 mA
Power Dissipation
[2,3]
7.0 W
RF Input Power
+25 dBm
Junction Temperature
200
C
Storage Temperature
65 to 200
C
Thermal Resistance
[2,4]
:
jc
= 15
C/W
G
P
Power Gain (|S
21
|
2
)
f = 1.0 GHz
dB
7.5
8.5
9.5
G
P
Gain Flatness
f = 0.1 to 2.0 GHz
dB
0.6
f
3 dB
3 dB Bandwidth
[2]
GHz
2.5
Input VSWR
f = 0.1 to 2.0 GHz
2.0:1
Output VSWR
f = 0.1 to 2.0 GHz
2.8:1
NF
25
Noise Figure
f = 1.0 GHz
dB
7.0
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
25.0
27.0
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
37.0
t
D
Group Delay
f = 1.0 GHz
psec
250
V
d
Device Voltage
V
13.5
15.0
16.5
dV/dT
Device Voltage Temperature Coefficient
mV/
C
18.0
Notes:
1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of
current is on the following page.
2. Referenced from 10 MHz gain (G
P
).
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions: I
d
= 325 mA, Z
O
= 25
Units
Min.
Typ.
Max.
VSWR
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
C.
3. Derate at 66.7 mW/
C for T
C
> 95
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods. See MEASURE-
MENTS section "Thermal Resistance" for more information.
6-448
MSA-1023 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
C, I
d
= 325 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.001
.40
121
15.3
5.85
149
17.9
.128
22
.42
99
0.69
0.005
.51
167
8.5
2.67
156
15.9
.160
6
.45
161
1.05
0.010
.52
174
7.5
2.36
166
15.8
.162
3
.45
171
1.16
0.025
.52
178
7.2
2.28
172
15.8
.162
1
.45
177
1.20
0.050
.52
179
7.1
2.26
173
15.8
.161
1
.45
179
1.21
0.100
.53
176
7.0
2.25
170
15.8
.161
3
.45
179
1.21
0.200
.53
172
7.0
2.25
163
15.8
.161
5
.46
174
1.21
0.400
.51
164
7.0
2.24
146
15.8
.161
11
.46
170
1.22
0.600
.48
157
7.0
2.24
130
16.0
.159
16
.45
165
1.23
0.800
.45
151
7.0
2.23
113
16.1
.157
21
.44
161
1.24
1.000
.42
146
7.0
2.23
95
16.2
.155
26
.44
157
1.24
1.200
.38
144
6.9
2.22
78
16.4
.151
31
.44
155
1.24
1.400
.35
145
6.8
2.20
61
16.7
.146
36
.45
154
1.24
1.600
.34
149
6.6
2.15
44
17.0
.141
41
.46
153
1.22
1.800
.36
152
6.3
2.07
19
17.3
.136
45
.49
150
1.18
2.000
.39
153
5.9
1.97
11
17.7
.130
49
.62
148
1.13
2.500
.51
148
4.6
1.69
24
18.3
.121
52
.52
140
.91
3.000
.60
133
3.0
1.41
57
17.9
.127
57
.70
128
.59
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
C
(unless otherwise noted)
GAIN (dB)
18
16
20
22
26
28
24
30
32
POWER OUT (dBm)
Figure 1. Typical Gain vs. Power Out,
Z
O
= 25
, I
d
= 325 mA.
200
150
250
300
350
400
I
d
(mA)
Figure 3. Output Power at 1 dB
Gain Compression, Third Order
Intercept Point vs. Current,
Z
O
=25
, f = 1.0 GHz.
0
2
4
6
8
10
20
24
28
36
32
40
0.5 GHz
0.5 GHz
Figure 4. Output Power at 1 dB Gain
Compression vs. Temperature,
Z
O
= 25
, I
d
= 325 mA.
FREQUENCY (GHz)
Figure 5. Gain vs. Frequency,
I
d
= 325 mA.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0
8
10
6
4
2
GAIN
(dB)
I
d
= 325 mA
I
d
= 150 mA
20
22
24
26
28
30
32
+25
50
+100
P
1 dB
(dBm)
TEMPERATURE (
C)
2.0 GHz
1.0 GHz,
4.0 GHz
1.0 GHz
P
1 dB
I
d
= 400 mA
1.0 GHz
1.5 GHz
2.0 GHz
P
1 dB
(dBm)
IP
3
(dBm)
IP
3
FREQUENCY (GHz)
Figure 6. VSWR vs. Frequency,
I
d
= 325 mA.
0.1
0.2 0.3
0.5
2.0
1.0
3.0
0
5
6
4
3
2
1
VSWR
Input Z
O
= 50
Output Z
O
= 25
2
0
4
6
8
10
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
100
200
300
400
I
d
(mA)
T
C
= +100
C
T
C
= +25
C
T
C
= 50
C
Input Z
O
= 25
Output Z
O
= 50
Z
O
= 25
Z
O
= 50
6-449
230 mil BeO Flange Package
1
3
4
2
GROUND
RF OUTPUT
AND BIAS
RF
INPUT
.230
5.84
.120
3.05
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
.060
1.52
.004
.002
.10
.05
.130
.010
3.30
.25
.800
20.32
.562
14.27
.050
1.27
GROUND
.130
3.30
.725
.030
18.42
.76
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